DIODES DMG7408SFG-7
| Hersteller | |
| Herst.-Teilenr. | DMG7408SFG-7 |
| LCSC-Nr. | C508199 |
| Verp. | PowerDI3333-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 7A PowerDI3333-8 |
| Datenblatt | |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternative Teile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61.4pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 478.9pF | |
| Gate Charge(Qg) | 17nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61.4pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 478.9pF | |
| Gate Charge(Qg) | 17nC@10V |
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Beschreibung
KI-Übersetzung
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Merkmale
KI-Übersetzung
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Low RDS(ON) – Ensures On State Losses Are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Occupies Just 33% of The Board Area Occupied by SO - 8 Enabling Smaller End Product
- Totally Lead - Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC - Q101 Standards for High Reliability
Anwendungen
KI-Übersetzung
- Backlighting
- Power Management Functions
- DC - DC Converters
Vorrätig: 4
4 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5529 | $ 0.55 |
| 10+ | $ 0.4395 | $ 4.40 |
| 30+ | $ 0.3922 | $ 11.77 |
| 100+ | $ 0.3308 | $ 33.08 |
| 500+ | $ 0.304 | $ 152.00 |
| 1,000+ | $ 0.2883 | $ 288.30 |
| 2,000+ | $ 0.2851 | $ 570.20 |
| 4,000+ | $ 0.2836 | $ 1134.40 |
Standardgehäuse2000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61.4pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 478.9pF | |
| Gate Charge(Qg) | 17nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61.4pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 478.9pF | |
| Gate Charge(Qg) | 17nC@10V |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Merkmale
KI-Übersetzung
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Low RDS(ON) – Ensures On State Losses Are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Occupies Just 33% of The Board Area Occupied by SO - 8 Enabling Smaller End Product
- Totally Lead - Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC - Q101 Standards for High Reliability
Anwendungen
KI-Übersetzung
- Backlighting
- Power Management Functions
- DC - DC Converters
C508199 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| DMT6017LFV-7 | DIODES | PowerDI3333-8 | 80 | $ 0.9017 | ||
| DMN3025LFV-13 | DIODES | PowerDI3333-8 | 5,820 | $ 0.1475 | ||
| JSM3622 | JSMSEMI | PDFN-8(3.3x3.3) | 2,627 | $0.1436 $0.1511 | ||
| WNM3040-8/TR | WILLSEMI | PDFN3333-8L | 4,895 | $ 0.2191 | ||
| DMN3024SFG-7 | DIODES | PowerDI3333-8 | 0 | $ 0.316 | ||
| DMN3025LFV-7 | DIODES | PowerDI3333-8 | 0 | $ 0.2578 | ||
| DMT10H009LCG-7 | DIODES | VDFN3333-8 | 0 | $ 1.9148 | ||
| RQ3E100MNTB1 | ROHM | HSMT-8(3x3.2) | 0 | $ 1.1441 | ||
| DMT6015LFV-7 | DIODES | PowerDI3333-8 | 0 | $ 0.5232 | ||
| DMN3025LFG-13 | DIODES | PowerDI3333-8 | 0 | $ 0.2771 |



