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Nexperia BUK965R8-100E,118
| Manufacturer | |
| MPN | BUK965R8-100E,118 |
| LCSC Part # | C503632 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 120A TO-263 |
| Datasheet | Nexperia BUK965R8-100E,118 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 725pF | |
| Pd - Power Dissipation | 349W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 5.8mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17.46nF | |
| Gate Charge(Qg) | 133nC@5V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 725pF | |
| Pd - Power Dissipation | 349W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 5.8mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17.46nF | |
| Gate Charge(Qg) | 133nC@5V | |
| Vgs | ±10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features
AI Translation
- AEC Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
Applications
AI Translation
- 12V, 24V and 48V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.2736 | $ 2.27 |
| 10+ | $ 2.2239 | $ 22.24 |
| 30+ | $ 2.1907 | $ 65.72 |
| 100+ | $ 2.1575 | $ 215.75 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 725pF | |
| Pd - Power Dissipation | 349W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 5.8mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17.46nF | |
| Gate Charge(Qg) | 133nC@5V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 725pF | |
| Pd - Power Dissipation | 349W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 5.8mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17.46nF | |
| Gate Charge(Qg) | 133nC@5V | |
| Vgs | ±10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features
AI Translation
- AEC Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
Applications
AI Translation
- 12V, 24V and 48V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
C503632 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| PSMN3R8-100BS-VB | VBsemi Elec | Similar | TO-263 | 11 | $2.0282 $2.1349 | ||
| CSD19532KTTT-VB | VBsemi Elec | Similar | D2PAK(TO-263) | 12 | $1.8935 $2.2276 | ||
| FDB075N15A | onsemi | Similar | D2PAK | 68 | $ 3.8021 | ||
| AUB034N10 | ANHI | Similar | TO-263 | 652 | $ 0.9158 | ||
| PSMN5R6-100BS-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 12 | $1.4405 $1.6947 |
5 more alternative parts.View all substitutes