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Nexperia PMPB215ENEAX
| Manufacturer | |
| MPN | PMPB215ENEAX |
| LCSC Part # | C503394 |
| Packaging | DFN-6-MD(2x2) |
| Customer # | |
| Key Attributes | 1.6W 80V 1.9A 175mΩ@10V 1 N-channel N-Channel DFN-6-MD(2x2) Single FETs, MOSFETs RoHS |
| Datasheet | Nexperia PMPB215ENEAX |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6-MD(2x2) | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 215pF | |
| Pd - Power Dissipation | 1.6W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 1.9A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6-MD(2x2) | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 215pF | |
| Pd - Power Dissipation | 1.6W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 80V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 1.9A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
N-channel enhancement-mode FET using trench MOSFET technology, housed in a leadless medium-power DFN2020MD-6 (SOT1220) SMD plastic package.
Features
AI Translation
- Trench MOSFET technology
- Compact leadless ultra-thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal performance
- Tin-plated 100% solderable side pads for easy optical solder inspection
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuit
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Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.1589 | $ 0.79 |
| 50+ | $ 0.1555 | $ 7.78 |
| 150+ | $ 0.1532 | $ 22.98 |
| 500+ | $ 0.151 | $ 75.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6-MD(2x2) | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 215pF | |
| Pd - Power Dissipation | 1.6W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 1.9A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN-6-MD(2x2) | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 215pF | |
| Pd - Power Dissipation | 1.6W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 80V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 1.9A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 175mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.8nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
N-channel enhancement-mode FET using trench MOSFET technology, housed in a leadless medium-power DFN2020MD-6 (SOT1220) SMD plastic package.
Features
AI Translation
- Trench MOSFET technology
- Compact leadless ultra-thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal performance
- Tin-plated 100% solderable side pads for easy optical solder inspection
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuit
C503394 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FDMA86251 | onsemi | Similar | VDFN-6(2x2) | 93 | $ 1.8239 | ||
| FDMA86108LZ | onsemi | Similar | VDFN-6(2x2) | 50 | $ 1.2315 | ||
| DMT10H072LFDFQ-7 | DIODES | Similar | UDFN2020-6 | 729 | $ 0.6471 | ||
| BUK6D81-80EX | Nexperia | Similar | DFN-6-MD(2x2) | 2 | $ 1.4808 | ||
| AON2290 | AOS | Similar | DFN2x2B | 2,949 | $ 0.4278 |