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ST STP5N60M2
| Manufacturer | |
| MPN | STP5N60M2 |
| LCSC Part # | C501042 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 600V 3.5A 4V 45W 1.4Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datasheet | ST STP5N60M2 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 165pF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 165pF | |
| Gate Charge(Qg) | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices feature low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (COSS) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9488 | $ 0.95 |
| 10+ | $ 0.9358 | $ 9.36 |
| 30+ | $ 0.9277 | $ 27.83 |
| 100+ | $ 0.9196 | $ 91.96 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 165pF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 3.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 165pF | |
| Gate Charge(Qg) | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices feature low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (COSS) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C501042 EasyEDA Library
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TK6A80E,S4X | TOSHIBA | TO-220-3 | 2,159 | $ 0.454 | ||
| TK10A60D(STA4,X,S) | TOSHIBA | TO-220 | 6,583 | $ 0.7097 | ||
| TK11A65D(STA4,X,M) | TOSHIBA | TO-220 | 2,456 | $ 0.826 | ||
| WGP7N70SE | Wild Goose | TO-220 | 975 | $ 0.3224 | ||
| WGP12N65SE | Wild Goose | TO-220 | 682 | $ 0.4899 | ||
| SVF8N65F | Hangzhou Silan Microelectronics | TO-220 | 0 | $ 0.9082 | ||
| JCS8N60FC | Jilin Sino-Microelectronics | TO-220MF | 0 | $ 0.6954 | ||
| PJMP990N65EC_T0_00001 | PANJIT | TO-220AB-L | 0 | $ 1.0048 | ||
| AOTF7N65 | AOS | TO-220-3 | 0 | $ 0.8286 | ||
| PJMP900N60EC_T0_00001 | PANJIT | TO-220AB-L | 0 | $ 1.0048 |