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ST STD4LN80K5

Manufacturer
ST
MPN
STD4LN80K5
LCSC Part #
C500957
Packaging
DPAK
Customer #
Key Attributes
60W 800V 3A 2.6Ω@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS
DatasheetST STD4LN80K5
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Output Capacitance(Coss)11pF
Ciss-Input Capacitance122pF
Pd - Power Dissipation60W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Reverse Transfer Capacitance (Crss)0.3pF
RDS(on)2.6Ω@10V
Number1 N-channel
Gate Charge(Qg)3.7nC@640V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

This ultra-high voltage N-channel power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is significantly reduced on-resistance and ultra-low gate charge, making it ideal for applications with demanding power density and efficiency requirements.

Features

AI Translation
  • Industry-lowest RDS(on) × area
  • Industry-best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener protection

Applications

AI Translation
  • Switching applications