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ST STGD6M65DF2
| Manufacturer | |
| MPN | STGD6M65DF2 |
| LCSC Part # | C472580 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 88W 12A 650V FS (Field Stop) TO-252 Single IGBTs RoHS |
| Datasheet | ST STGD6M65DF2 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 88W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 12A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@6A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 200uJ | |
| Turn-On Energy (Eon) | 36uJ | |
| Input Capacitance(Cies) | 530pF | |
| Output Capacitance(Coes) | 31pF | |
| Gate Charge(Qg) | 21.2nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 88W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 12A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@6A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 200uJ | |
| Turn-On Energy (Eon) | 36uJ | |
| Input Capacitance(Cies) | 530pF | |
| Output Capacitance(Coes) | 31pF | |
| Gate Charge(Qg) | 21.2nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure, belonging to the M-series IGBT family, designed to balance inverter system performance and efficiency in applications where low losses and short-circuit capability are critical. In addition, the positive V<sub>CE(sat)</sub> temperature coefficient and tight parameter distribution enable safer parallel operation.
Features
AI Translation
- Short-circuit withstand time 6μs
- V<sub>CE(sat)</sub> typical 1.55V @ I<sub>C</sub>=6A
- Tight parameter distribution
- Safer parallel operation
- Low thermal resistance
- Soft and fast-recovery anti-parallel diode
Applications
AI Translation
- Motor control
- UPS
- PFC
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6126 | $ 1.61 |
| 10+ | $ 1.3517 | $ 13.52 |
| 30+ | $ 1.2074 | $ 36.22 |
| 100+ | $ 1.045 | $ 104.50 |
| 500+ | $ 0.9728 | $ 486.40 |
| 1,000+ | $ 0.9416 | $ 941.60 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 88W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 12A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@6A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 200uJ | |
| Turn-On Energy (Eon) | 36uJ | |
| Input Capacitance(Cies) | 530pF | |
| Output Capacitance(Coes) | 31pF | |
| Gate Charge(Qg) | 21.2nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-252 | |
| Td(off) | 90ns | |
| Pd - Power Dissipation | 88W | |
| Td(on) | 15ns | |
| Current - Collector(Ic) | 12A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2V@6A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 200uJ | |
| Turn-On Energy (Eon) | 36uJ | |
| Input Capacitance(Cies) | 530pF | |
| Output Capacitance(Coes) | 31pF | |
| Gate Charge(Qg) | 21.2nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure, belonging to the M-series IGBT family, designed to balance inverter system performance and efficiency in applications where low losses and short-circuit capability are critical. In addition, the positive V<sub>CE(sat)</sub> temperature coefficient and tight parameter distribution enable safer parallel operation.
Features
AI Translation
- Short-circuit withstand time 6μs
- V<sub>CE(sat)</sub> typical 1.55V @ I<sub>C</sub>=6A
- Tight parameter distribution
- Safer parallel operation
- Low thermal resistance
- Soft and fast-recovery anti-parallel diode
Applications
AI Translation
- Motor control
- UPS
- PFC
C472580 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| RGT16BM65DTL | ROHM | TO-252 | 127 | $ 1.7536 | ||
| MSG10D120HLD0 | MASPOWER | TO-252 | 92 | $ 0.8326 | ||
| IGD08N120S7ATMA1 | Infineon | TO-252-3 | 50 | $ 2.7847 | ||
| JNG10T65DJS1 | JIAENSEMI | TO-252-2L | 1,377 | $ 0.4587 | ||
| IXYY8N90C3 | Littelfuse/IXYS | TO-252AA | 10 | $ 4.5586 | ||
| IGD06N60TATMA1 | Infineon | TO-252 | 0 | $ 1.0983 | ||
| IGD15N65T6ARMA1 | Infineon | TO-252-3 | 0 | $ 2.7363 | ||
| IXYY8N90C3-TRL | Littelfuse/IXYS | TO-252AA | 0 | $ 4.0048 | ||
| IRGR4045DTRPBF | Infineon | DPAK | 0 | $ 2.6432 | ||
| IRGR4045DPBF | Infineon | DPAK | 0 | $ 2.3253 |