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ST STD4N80K5
| Fabricante | |
| N.º de pieza fab. | STD4N80K5 |
| Nº LCSC | C472540 |
| Emb. | TO-252(DPAK) |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 800V 3A TO-252(DPAK) |
| Hoja de Datos | ST STD4N80K5 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | 10.5nC@640V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 3A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | 10.5nC@640V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Características
Traducción por IA
- Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested Zener-protected
Aplicaciones
Traducción por IA
- Switching applications
En stock: 73
73 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 1.8046 | $ 1.80 |
| 10+ | $ 1.5422 | $ 15.42 |
| 30+ | $ 1.379 | $ 41.37 |
| 100+ | $ 1.2111 | $ 121.11 |
| 500+ | $ 1.1343 | $ 567.15 |
| 1,000+ | $ 1.1023 | $ 1102.30 |
Encapsulado Estándar2500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | 10.5nC@640V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-252(DPAK) | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 3A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | 10.5nC@640V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Características
Traducción por IA
- Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested Zener-protected
Aplicaciones
Traducción por IA
- Switching applications
C472540 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| SIHD5N80AE-GE3 | VISHAY | TO-252AA | 10 | $ 1.0869 | ||
| STD1NK80ZT4-VB | VBsemi Elec | TO-252 | 40 | $1.0379 $1.221 | ||
| STD5N80K5 | ST | DPAK | 90 | $ 3.5986 | ||
| SL5N100D | Slkor | TO-252(DPAK) | 1,300 | $0.5877 $0.653 | ||
| OSD4N80-OSEN | OSEN | TO-252 | 200 | $ 0.2782 | ||
| STD4LN80K5 | ST | DPAK | 0 | $ 1.0789 | ||
| STD5N95K5 | ST | TO-252(DPAK) | 0 | $ 2.4857 | ||
| STD4N90K5 | ST | DPAK | 0 | $ 2.8513 | ||
| SIHD6N80AE-GE3 | VISHAY | TO-252AA | 0 | $ 2.2323 | ||
| IPD80R2K0P7ATMA1 | Infineon | TO-252-3 | 0 | $ 0.7279 |