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onsemi FQB47P06TM-AM002
| Manufacturer | |
| MPN | FQB47P06TM-AM002 |
| LCSC Part # | C464177 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 47A D2PAK |
| Datasheet | onsemi FQB47P06TM-AM002 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.3nF | |
| Ciss-Input Capacitance | 3.6nF | |
| Pd - Power Dissipation | 3.75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 47A | |
| Reverse Transfer Capacitance (Crss) | 420pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@48V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.3nF | |
| Ciss-Input Capacitance | 3.6nF | |
| Pd - Power Dissipation | 3.75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 47A | |
| Reverse Transfer Capacitance (Crss) | 420pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@48V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
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Introduction
AI Translation
This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
AI Translation
- -47 A, -60 V, RDS(on)=26 mΩ(Max.) @ VGS=-10 V, ID=-23.5 A
- Low Gate Charge (Typ. 84 nC)
- Low Crss (Typ. 320 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
Applications
AI Translation
- switched mode power supplies
- audio amplifier
- DC motor control
- variable switching power applications
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Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.9396 | $ 7.94 |
| 10+ | $ 7.1419 | $ 71.42 |
| 30+ | $ 6.6545 | $ 199.64 |
| 100+ | $ 6.2467 | $ 624.67 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.3nF | |
| Ciss-Input Capacitance | 3.6nF | |
| Pd - Power Dissipation | 3.75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 47A | |
| Reverse Transfer Capacitance (Crss) | 420pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@48V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.3nF | |
| Ciss-Input Capacitance | 3.6nF | |
| Pd - Power Dissipation | 3.75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 47A | |
| Reverse Transfer Capacitance (Crss) | 420pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@48V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
AI Translation
- -47 A, -60 V, RDS(on)=26 mΩ(Max.) @ VGS=-10 V, ID=-23.5 A
- Low Gate Charge (Typ. 84 nC)
- Low Crss (Typ. 320 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
Applications
AI Translation
- switched mode power supplies
- audio amplifier
- DC motor control
- variable switching power applications
C464177 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| SUM55P06-19L-E3 | VISHAY | Similar | TO-263(D2PAK) | 18 | $ 2.8591 | ||
| NP36P06KDG-E1-AY-JSM | JSMSEMI | Similar | TO-263 | 770 | $0.6010 $0.6326 | ||
| IRF4905STRLPBF-JSM | JSMSEMI | Similar | TO-263 | 5,512 | $0.5852 $0.6159 | ||
| SUM110P06-07L-E3 | VISHAY | Similar | TO-263(D2PAK) | 883 | $ 3.6349 | ||
| SUM110P06-08L-E3-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 6 | $1.9018 $2.2374 |