onsemi MUN5212T1G
| Manufacturer | |
| MPN | MUN5212T1G |
| LCSC Part # | C463098 |
| Packaging | SOT-323-3 |
| Customer # | |
| Key Attributes | 50V 60 100mA 202mW NPN 1 NPN (Pre-Biased) SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | onsemi MUN5212T1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Introduction
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 20+ | $ 0.0373 | $ 0.75 |
| 200+ | $ 0.0294 | $ 5.88 |
| 600+ | $ 0.025 | $ 15.00 |
| 3,000+ | $ 0.0224 | $ 67.20 |
| 9,000+ | $ 0.0201 | $ 180.90 |
| 21,000+ | $ 0.0188 | $ 394.80 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@5mA,0.3V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Introduction
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C463098 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SMUN5212T1G | onsemi | SC-70 | 70 | $ 0.1824 | ||
| PDTC124EU,115 | Nexperia | SOT-323 | 1,805 | $ 0.1625 | ||
| PDTC124ET-QR | Nexperia | SC-70 | 2,720 | $ 0.0296 | ||
| MUN5211T1G | onsemi | SC-70(SOT-323) | 3,360 | $ 0.1085 | ||
| PDTC114EU-QX | Nexperia | SOT-323 | 5 | $ 0.2172 | ||
| PDTC114EU,115 | Nexperia | SC-70 | 55,290 | $ 0.04 | ||
| PDTC124EU,135 | Nexperia | SOT-323-3 | 0 | $ 0.0228 | ||
| SMUN5211T3G | onsemi | SC-70 | 0 | $ 0.0586 | ||
| PDTC114EU,135 | Nexperia | SOT-323-3 | 0 | $ 0.0429 | ||
| MMDT5212W | ST(Semtech) | SOT-323 | 0 | $ 0.0233 |



