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Infineon IRF1310NSTRLPBF
| Manufacturer | |
| MPN | IRF1310NSTRLPBF |
| LCSC Part # | C459935 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 42A D2PAK |
| Datasheet | Infineon IRF1310NSTRLPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 450pF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 450pF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF1310NL) is available for low profile applications.
Features
- Advanced Process Technology
- Surface Mount (IRF1310NS)
- Low - profile through - hole (IRF1310NL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead - Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.3633$ 1.1043 | $ 1.10 |
| 10+ | $ 1.1332$ 0.9179 | $ 9.18 |
| 30+ | $ 1.006$ 0.8149 | $ 24.45 |
| 100+ | $ 0.8628$ 0.6989 | $ 69.89 |
| 500+ | $ 0.8$ 0.6480 | $ 324.00 |
| 800+ | $ 0.771$ 0.6246 | $ 499.68 |
Standard Packaging800/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 450pF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 450pF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF1310NL) is available for low profile applications.
Features
- Advanced Process Technology
- Surface Mount (IRF1310NS)
- Low - profile through - hole (IRF1310NL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead - Free
C459935 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WSK55N20 | Winsok Semicon | TO-263-2L | 36 | $1.3057 $1.5361 | ||
| HM50N15D-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $1.5548 $1.8291 | ||
| IRF3710STRPBF-JSM | JSMSEMI | TO-263 | 440 | $0.8173 $0.8603 | ||
| FQB70N10TM | onsemi | D2PAK(TO-263) | 0 | $ 1.4798 | ||
| IRF1310NSPBF-INF | Infineon | D2PAK | 0 | $ 0.5864 | ||
| IPB200N15N3 G | Infineon | TO-263-2 | 0 | $ 10.3765 | ||
| NCEP055N10D | NCE | TO-263 | 0 | $ 0.8592 | ||
| PHB45NQ15T,118-VB | VBsemi Elec | TO-263 | 0 | $ 2.7831 | ||
| SE10060B | SINO-IC | TO-263 | 0 | $ 0.7669 | ||
| SUM90100E-GE3 | VISHAY | TO-263(D2PAK) | 0 | $ 6.1233 |