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MACOM MADS-002502-1246LP

Fabricante
N.º de pieza fab.
MADS-002502-1246LP
Nº LCSC
C4468375
Emb.
SMD,1.1x0.4mm
Número de Cliente
Atrib. clave
1 Independent 20mA 330mV@1mA 5V SMD,1.1x0.4mm RF Diodes RoHS
Hoja de DatosMACOM MADS-002502-1246LP
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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Cant.Prec. unit.(Solo como referencia)Importo total
1+$ 2.1492$ 2.15
200+$ 0.8318$ 166.36
500+$ 0.8032$ 401.60
1,000+$ 0.7889$ 788.90
Encapsulado Estándar3000/Full Reel
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Especificaciones del Producto

Todo
TipoDescripción
CategoríaDiscrete Semiconductors/Diodes/RF Diodes
FabricanteMACOM
Emb.SMD,1.1x0.4mm
Non-Repetitive Peak Forward Surge Current-
Diode Configuration1 Independent
Current - Rectified20mA
Reverse Leakage Current (Ir)-
Operating Junction Temperature Range-
Voltage - Forward(Vf@If)330mV@1mA
Voltage - DC Reverse(Vr)5V

Descripción

Traducción por IA

The MA4E2502 Surmount™ series diodes are silicon-based low, medium, and high barrier Schottky devices fabricated using a patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon mesas that form diodes or via conductors, embedded in a glass dielectric that serves as a low-dispersion microstrip transmission medium. The combination of silicon and glass gives HMIC devices excellent loss and power dissipation characteristics in a low-profile, reliable package.

Surmount™ Schottky devices are ideal for circuits requiring the low parasitics of beam lead devices combined with the superior mechanical properties of a die. The Surmount™ structure uses extremely low-resistance silicon vias to connect the Schottky contact to a metallized mounting pad on the bottom surface of the die. These devices are reliable, repeatable, and offer a low-cost, high-performance alternative to conventional devices. Compared to conventional beam lead Schottky diodes, they exhibit lower sensitivity to electrostatic discharge.

The multilayer metallization used in fabricating the Surmount™ Schottky junction includes a platinum diffusion barrier, enabling all devices to withstand non-operating stabilization baking at 300°C for 16 hours.

The "0502" footprint allows surface mounting and versatile polarity orientation.

The MA4E2502 series Surmount™ Schottky diodes are recommended for microwave circuit applications up to Ku-band frequencies in low-power applications such as mixers, subharmonic mixers, detectors, and limiters. The HMIC construction facilitates direct replacement of more fragile beam lead diodes with the corresponding Surmount™ diode, which can be solder-attached to hard or soft substrate circuits.

Características

Traducción por IA
  • Ultra-low parasitic capacitance and inductance
  • Surface-mountable for microwave circuits without wire bonding
  • Rugged HMIC construction with polyimide scratch protection
  • Reliable multilayer metallization with diffusion barrier, 100% stabilization bake (300°C, 16 hours)
  • Reduced susceptibility to ESD damage

Aplicaciones

Traducción por IA

The MA4E2502 series Surmount™ Schottky diodes are recommended for low-power applications in microwave circuits up to Ku-band frequencies, such as mixers, subharmonic mixers, detectors, and limiters.