MACOM MADS-002502-1246LP
| Fabricante | |
| N.º de pieza fab. | MADS-002502-1246LP |
| Nº LCSC | C4468375 |
| Emb. | SMD,1.1x0.4mm |
| Número de Cliente | |
| Atrib. clave | 1 Independent 20mA 330mV@1mA 5V SMD,1.1x0.4mm RF Diodes RoHS |
| Hoja de Datos | MACOM MADS-002502-1246LP |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/RF Diodes | |
| Fabricante | MACOM | |
| Emb. | SMD,1.1x0.4mm | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Independent | |
| Current - Rectified | 20mA | |
| Reverse Leakage Current (Ir) | - | |
| Operating Junction Temperature Range | - | |
| Voltage - Forward(Vf@If) | 330mV@1mA | |
| Voltage - DC Reverse(Vr) | 5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/RF Diodes | |
| Fabricante | MACOM | |
| Emb. | SMD,1.1x0.4mm | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Independent |
| Tipo | Descripción | |
|---|---|---|
| Current - Rectified | 20mA | |
| Reverse Leakage Current (Ir) | - | |
| Operating Junction Temperature Range | - | |
| Voltage - Forward(Vf@If) | 330mV@1mA | |
| Voltage - DC Reverse(Vr) | 5V |
Descripción
The MA4E2502 Surmount™ series diodes are silicon-based low, medium, and high barrier Schottky devices fabricated using a patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon mesas that form diodes or via conductors, embedded in a glass dielectric that serves as a low-dispersion microstrip transmission medium. The combination of silicon and glass gives HMIC devices excellent loss and power dissipation characteristics in a low-profile, reliable package.
Surmount™ Schottky devices are ideal for circuits requiring the low parasitics of beam lead devices combined with the superior mechanical properties of a die. The Surmount™ structure uses extremely low-resistance silicon vias to connect the Schottky contact to a metallized mounting pad on the bottom surface of the die. These devices are reliable, repeatable, and offer a low-cost, high-performance alternative to conventional devices. Compared to conventional beam lead Schottky diodes, they exhibit lower sensitivity to electrostatic discharge.
The multilayer metallization used in fabricating the Surmount™ Schottky junction includes a platinum diffusion barrier, enabling all devices to withstand non-operating stabilization baking at 300°C for 16 hours.
The "0502" footprint allows surface mounting and versatile polarity orientation.
The MA4E2502 series Surmount™ Schottky diodes are recommended for microwave circuit applications up to Ku-band frequencies in low-power applications such as mixers, subharmonic mixers, detectors, and limiters. The HMIC construction facilitates direct replacement of more fragile beam lead diodes with the corresponding Surmount™ diode, which can be solder-attached to hard or soft substrate circuits.
Características
- Ultra-low parasitic capacitance and inductance
- Surface-mountable for microwave circuits without wire bonding
- Rugged HMIC construction with polyimide scratch protection
- Reliable multilayer metallization with diffusion barrier, 100% stabilization bake (300°C, 16 hours)
- Reduced susceptibility to ESD damage
Aplicaciones
The MA4E2502 series Surmount™ Schottky diodes are recommended for low-power applications in microwave circuits up to Ku-band frequencies, such as mixers, subharmonic mixers, detectors, and limiters.
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 2.1492 | $ 2.15 |
| 200+ | $ 0.8318 | $ 166.36 |
| 500+ | $ 0.8032 | $ 401.60 |
| 1,000+ | $ 0.7889 | $ 788.90 |
Encapsulado Estándar3000/Full Reel | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/RF Diodes | |
| Fabricante | MACOM | |
| Emb. | SMD,1.1x0.4mm | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Independent | |
| Current - Rectified | 20mA | |
| Reverse Leakage Current (Ir) | - | |
| Operating Junction Temperature Range | - | |
| Voltage - Forward(Vf@If) | 330mV@1mA | |
| Voltage - DC Reverse(Vr) | 5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/RF Diodes | |
| Fabricante | MACOM | |
| Emb. | SMD,1.1x0.4mm | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Independent |
| Tipo | Descripción | |
|---|---|---|
| Current - Rectified | 20mA | |
| Reverse Leakage Current (Ir) | - | |
| Operating Junction Temperature Range | - | |
| Voltage - Forward(Vf@If) | 330mV@1mA | |
| Voltage - DC Reverse(Vr) | 5V |
Descripción
The MA4E2502 Surmount™ series diodes are silicon-based low, medium, and high barrier Schottky devices fabricated using a patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon mesas that form diodes or via conductors, embedded in a glass dielectric that serves as a low-dispersion microstrip transmission medium. The combination of silicon and glass gives HMIC devices excellent loss and power dissipation characteristics in a low-profile, reliable package.
Surmount™ Schottky devices are ideal for circuits requiring the low parasitics of beam lead devices combined with the superior mechanical properties of a die. The Surmount™ structure uses extremely low-resistance silicon vias to connect the Schottky contact to a metallized mounting pad on the bottom surface of the die. These devices are reliable, repeatable, and offer a low-cost, high-performance alternative to conventional devices. Compared to conventional beam lead Schottky diodes, they exhibit lower sensitivity to electrostatic discharge.
The multilayer metallization used in fabricating the Surmount™ Schottky junction includes a platinum diffusion barrier, enabling all devices to withstand non-operating stabilization baking at 300°C for 16 hours.
The "0502" footprint allows surface mounting and versatile polarity orientation.
The MA4E2502 series Surmount™ Schottky diodes are recommended for microwave circuit applications up to Ku-band frequencies in low-power applications such as mixers, subharmonic mixers, detectors, and limiters. The HMIC construction facilitates direct replacement of more fragile beam lead diodes with the corresponding Surmount™ diode, which can be solder-attached to hard or soft substrate circuits.
Características
- Ultra-low parasitic capacitance and inductance
- Surface-mountable for microwave circuits without wire bonding
- Rugged HMIC construction with polyimide scratch protection
- Reliable multilayer metallization with diffusion barrier, 100% stabilization bake (300°C, 16 hours)
- Reduced susceptibility to ESD damage
Aplicaciones
The MA4E2502 series Surmount™ Schottky diodes are recommended for low-power applications in microwave circuits up to Ku-band frequencies, such as mixers, subharmonic mixers, detectors, and limiters.
C4468375 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

