DIODES DMP210DUFB4-7
| Fabricante | |
| N.º de pieza fab. | DMP210DUFB4-7 |
| Nº LCSC | C445553 |
| Emb. | X2-DFN1006-3 |
| Número de Cliente | |
| Atrib. clave | MOSFET P-CH 20V 200mA X2-DFN1006-3 |
| Hoja de Datos | DIODES DMP210DUFB4-7 |
| Cumplimiento RoHS | 5 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DIODES | |
| Emb. | X2-DFN1006-3 | |
| Output Capacitance(Coss) | 4.01pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.34pF | |
| RDS(on) | 5Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DIODES | |
| Emb. | X2-DFN1006-3 | |
| Output Capacitance(Coss) | 4.01pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 200mA |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.34pF | |
| RDS(on) | 5Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Type | P-Channel |
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Descripción
Traducción por IA
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Características
Traducción por IA
- P-Channel MOSFET
- Low On-Resistance
- Very Low Gate Threshold Voltage VGS(TH)
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surfaced Mount Package
- Ultra-Low Package Profile, 0.4mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Aplicaciones
Traducción por IA
- DC-DC Converters
- Power Management Functions
En stock: 5
5 En stock, envío inmediato
Descontinuado
Una vez agotadas las existencias, este producto pasará a "No disponible".
Avisarme
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.1956 | $ 0.98 |
| 50+ | $ 0.1914 | $ 9.57 |
| 150+ | $ 0.1887 | $ 28.31 |
| 500+ | $ 0.1859 | $ 92.95 |
Encapsulado Estándar3000/Full Reel | ||
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DIODES | |
| Emb. | X2-DFN1006-3 | |
| Output Capacitance(Coss) | 4.01pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.34pF | |
| RDS(on) | 5Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DIODES | |
| Emb. | X2-DFN1006-3 | |
| Output Capacitance(Coss) | 4.01pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 200mA |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.34pF | |
| RDS(on) | 5Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 175pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Características
Traducción por IA
- P-Channel MOSFET
- Low On-Resistance
- Very Low Gate Threshold Voltage VGS(TH)
- Low Input Capacitance
- Fast Switching Speed
- Ultra-Small Surfaced Mount Package
- Ultra-Low Package Profile, 0.4mm Maximum Package Height
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Aplicaciones
Traducción por IA
- DC-DC Converters
- Power Management Functions
C445553 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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