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Infineon FP100R12N2T7
| Manufacturer | |
| MPN | FP100R12N2T7 |
| LCSC Part # | C44051119 |
| Packaging | Through Hole,107.5x45mm |
| Customer # | |
| Key Attributes | IGBT 1.2kV 100A TH |
| Datasheet | Infineon FP100R12N2T7 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,107.5x45mm | |
| Pd - Power Dissipation | - | |
| Td(off) | 324ns | |
| Td(on) | 171ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | IGBT Module | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA | |
| Gate Charge(Qg) | 1.8uC@600V | |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 6.42mJ | |
| Turn-On Energy (Eon) | 10.4mJ | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 21.7nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,107.5x45mm | |
| Pd - Power Dissipation | - | |
| Td(off) | 324ns | |
| Td(on) | 171ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | IGBT Module |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA | |
| Gate Charge(Qg) | 1.8uC@600V | |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 6.42mJ | |
| Turn-On Energy (Eon) | 10.4mJ | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 21.7nF | |
| Output Capacitance(Coes) | - |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- VCES = 1200 V
- IC nom = 100 A / ICRM = 200 A
- Low VCEsat
- Overload operation up to 175 ℃
- TRENCHSTOPTM IGBT7
- Al2O3 substrate with low thermal resistance
- Copper base plate
- Integrated NTC temperature sensor
- Solder contact technology
Applications
AI Translation
- Servo drives
- Auxiliary inverters
- Motor drives
In-Stock: 20
20 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 49.9001 | $ 49.90 |
| 30+ | $ 47.3206 | $ 1419.62 |
Standard Packaging15/Full Box | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,107.5x45mm | |
| Pd - Power Dissipation | - | |
| Td(off) | 324ns | |
| Td(on) | 171ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | IGBT Module | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA | |
| Gate Charge(Qg) | 1.8uC@600V | |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 6.42mJ | |
| Turn-On Energy (Eon) | 10.4mJ | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 21.7nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,107.5x45mm | |
| Pd - Power Dissipation | - | |
| Td(off) | 324ns | |
| Td(on) | 171ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | IGBT Module |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA | |
| Gate Charge(Qg) | 1.8uC@600V | |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 6.42mJ | |
| Turn-On Energy (Eon) | 10.4mJ | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 21.7nF | |
| Output Capacitance(Coes) | - |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- VCES = 1200 V
- IC nom = 100 A / ICRM = 200 A
- Low VCEsat
- Overload operation up to 175 ℃
- TRENCHSTOPTM IGBT7
- Al2O3 substrate with low thermal resistance
- Copper base plate
- Integrated NTC temperature sensor
- Solder contact technology
Applications
AI Translation
- Servo drives
- Auxiliary inverters
- Motor drives
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |