20% OFF
- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
TWGMC SS210F
| Manufacturer | TWGMCAsian Brands |
| MPN | SS210F |
| LCSC Part # | C4154492 |
| Packaging | SMAF |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 100V SMAF |
| Datasheet | TWGMC SS210F |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | TWGMC | |
| Packaging | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@2A | |
| Reverse Leakage Current (Ir) | 300uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | TWGMC | |
| Packaging | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@2A | |
| Reverse Leakage Current (Ir) | 300uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power dissipation, high efficiency
- High forward surge current capability
- Low voltage, high frequency inverters, freewheeling and polarity protection applications
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | TWGMC | |
| Packaging | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@2A | |
| Reverse Leakage Current (Ir) | 300uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | TWGMC | |
| Packaging | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@2A | |
| Reverse Leakage Current (Ir) | 300uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power dissipation, high efficiency
- High forward surge current capability
- Low voltage, high frequency inverters, freewheeling and polarity protection applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |