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DOINGTER DON100N04
| Manufacturer | DOINGTERAsian Brands |
| MPN | DON100N04 |
| LCSC Part # | C41430596 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 100A DFN5x6-8 |
| Datasheet | DOINGTER DON100N04 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 78W | |
| RDS(on) | 5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 6.1nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 78W | |
| RDS(on) | 5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 6.1nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage VDS = 40 V, drain current ID = 100 A, on-resistance RDS(ON) < 3.5 mΩ at gate-source voltage VGS = 10 V
- Low gate charge
- Green/eco-friendly device options available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
In-Stock: 8,340
8,340 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 5Multiple: 5Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2434$ 0.2240 | $ 1.12 |
| 50+ | $ 0.213$ 0.1960 | $ 9.80 |
| 150+ | $ 0.2$ 0.1840 | $ 27.60 |
| 500+ | $ 0.1838$ 0.1691 | $ 84.55 |
| 2,500+ | $ 0.1765$ 0.1624 | $ 406.00 |
| 5,000+ | $ 0.1722$ 0.1585 | $ 792.50 |
Standard Packaging5000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 78W | |
| RDS(on) | 5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 6.1nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN5x6-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 78W | |
| RDS(on) | 5mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 6.1nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage VDS = 40 V, drain current ID = 100 A, on-resistance RDS(ON) < 3.5 mΩ at gate-source voltage VGS = 10 V
- Low gate charge
- Green/eco-friendly device options available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
C41430596 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DON140N04 | DOINGTER | DFN5x6-8 | 4,734 | $0.3167 $0.3442 | ||
| DON120N06 | DOINGTER | DFN5x6-8 | 4,437 | $ 0.4066 | ||
| DON110N12T | DOINGTER | DFN5x6-8 | 2,234 | $ 0.5032 | ||
| DON160N04T | DOINGTER | DFN5x6-8-Clip | 2,801 | $ 0.4179 | ||
| DON260N04T | DOINGTER | DFN5x6-8 | 5,886 | $ 0.8309 | ||
| ND2R8TG | DOINGTER | DFN-8(5x6) | 10 | $ 0.2514 | ||
| DON95N04 | DOINGTER | DFN5x6-8 | 1,630 | $0.1833 $0.1992 | ||
| DON100N10T | DOINGTER | DFN5x6-8 | 4,457 | $ 0.6577 | ||
| NH3R2TFG-CL | DOINGTER | DFN-8L(5x6) | 4,916 | $ 0.8375 | ||
| NH4R5T2G | DOINGTER | DFN-8(5x6) | 2,840 | $ 0.531 |