HXY MOSFET PESD3V3L1BA,115
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | PESD3V3L1BA,115 |
| LCSC Part # | C41364896 |
| Packaging | SOD-323 |
| Customer # | |
| Key Attributes | ESD DIODE 3.3VWM 18VC SOD-323 |
| Datasheet | HXY MOSFET PESD3V3L1BA,115 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOD-323 | |
| Clamping Voltage | 18V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 16A | |
| Peak Pulse Power Dissipation (Ppp) | 350W | |
| Voltage - Breakdown | 4.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOD-323 | |
| Clamping Voltage | 18V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 16A | |
| Peak Pulse Power Dissipation (Ppp) | 350W |
| Type | Description | |
|---|---|---|
| Voltage - Breakdown | 4.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Introduction
PESD3V3L1BA,115 is designed to protect sensitive semiconductor components from damage or malfunction caused by ESD and other voltage transient events. Its excellent clamping capability, low leakage, low capacitance, and fast response time deliver superior protection performance for designs exposed to ESD environments. The device offers designers flexibility to protect a single bidirectional line in applications where an array is not suitable. Available in SOD-323 package.
Features
- Compact form factor
- Low profile body
- Peak power up to 350 watts (8×20 μs pulse condition)
- Low leakage current
- Typical response time < 1 ns
- IEC61000-4-2 Level 4 ESD protection
- IEC61000-4-4 Level 4 EFT protection
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 20+ | $ 0.0353 | $ 0.71 |
| 200+ | $ 0.0278 | $ 5.56 |
| 600+ | $ 0.0237 | $ 14.22 |
| 3,000+ | $ 0.0212 | $ 63.60 |
| 9,000+ | $ 0.0191 | $ 171.90 |
| 21,000+ | $ 0.0179 | $ 375.90 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOD-323 | |
| Clamping Voltage | 18V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 16A | |
| Peak Pulse Power Dissipation (Ppp) | 350W | |
| Voltage - Breakdown | 4.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOD-323 | |
| Clamping Voltage | 18V | |
| Operating Temperature | -40℃~+125℃ | |
| Peak Pulse Current (Ipp) | 16A | |
| Peak Pulse Power Dissipation (Ppp) | 350W |
| Type | Description | |
|---|---|---|
| Voltage - Breakdown | 4.5V | |
| Number of Channels | 1 | |
| type | ESD | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 3.3V |
Introduction
PESD3V3L1BA,115 is designed to protect sensitive semiconductor components from damage or malfunction caused by ESD and other voltage transient events. Its excellent clamping capability, low leakage, low capacitance, and fast response time deliver superior protection performance for designs exposed to ESD environments. The device offers designers flexibility to protect a single bidirectional line in applications where an array is not suitable. Available in SOD-323 package.
Features
- Compact form factor
- Low profile body
- Peak power up to 350 watts (8×20 μs pulse condition)
- Low leakage current
- Typical response time < 1 ns
- IEC61000-4-2 Level 4 ESD protection
- IEC61000-4-4 Level 4 EFT protection
C41364896 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PESD3V3L1BA | HXY MOSFET | SOD-323 | 10,940 | $0.0279 $0.0293 | ||
| SD03C | HXY MOSFET | SOD-323 | 80 | $0.0266 $0.0279 | ||
| HESDLC3V3D3B | HXY MOSFET | SOD-323 | 330 | $0.0467 $0.0491 | ||
| HSPD91011W-2/TR | HXY MOSFET | SOD-323 | 120 | $0.1092 $0.1149 | ||
| BV03C | HXY MOSFET | SOD-323 | 4,200 | $ 0.0416 | ||
| HGBLC03C | HXY MOSFET | SOD-323 | 870 | $0.0395 $0.0448 | ||
| HPT03D3CE | HXY MOSFET | SOD-323 | 0 | $ 0.0734 | ||
| HUCD32C03L01 | HXY MOSFET | SOD-323 | 0 | $ 0.0635 | ||
| HGBL03C-A | HXY MOSFET | SOD-323 | 0 | $ 0.0503 | ||
| HCPDV3V3A-HF | HXY MOSFET | SOD-323 | 0 | $ 0.1059 |



