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Infineon IDH20G65C5XKSA2
| Manufacturer | |
| MPN | IDH20G65C5XKSA2 |
| LCSC Part # | C3758536 |
| Packaging | TO-220-2 |
| Customer # | |
| Key Attributes | 650V SiC Schottky Diode |
| Datasheet | Infineon IDH20G65C5XKSA2 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 20 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Infineon | |
| Packaging | TO-220-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@20A | |
| Reverse Leakage Current (Ir) | 210uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 142A | |
| Current - Rectified | 20A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Infineon | |
| Packaging | TO-220-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@20A | |
| Reverse Leakage Current (Ir) | 210uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 142A | |
| Current - Rectified | 20A |
Introduction
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc×Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target applications
- Breakdown voltage tested at 44 mA²
- Optimized for high temperature operation
Applications
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 11.5802 | $ 11.58 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Infineon | |
| Packaging | TO-220-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@20A | |
| Reverse Leakage Current (Ir) | 210uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 142A | |
| Current - Rectified | 20A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | Infineon | |
| Packaging | TO-220-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@20A | |
| Reverse Leakage Current (Ir) | 210uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 142A | |
| Current - Rectified | 20A |
Introduction
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc×Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target applications
- Breakdown voltage tested at 44 mA²
- Optimized for high temperature operation
Applications
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FFSP3065A | onsemi | TO-220-2L | 8 | $ 13.1277 | ||
| LJP20120 | luJing | TO-220AC | 78 | $1.2493 $1.3881 | ||
| MSC030SDA120K | MICROCHIP | TO-220-2 | 5 | $ 13.021 | ||
| HSCS215KGC17 | HXY MOSFET | TO-220C-2L | 41 | $2.0104 $2.2845 | ||
| FFSP20120A | JSMSEMI | TO-220-2 | 1,316 | $ 1.6996 | ||
| GC4D20120A | SUPSiC | TO-220-2 | 128 | $ 1.3144 | ||
| HC4D20120A | HXY MOSFET | TO-220-2L | 14 | $2.1673 $2.2813 | ||
| DDF3D15065A | DDF | TO-220AC-2 | 50 | $ 1.8957 | ||
| HSTPSC10H12D | HXY MOSFET | TO-220C-2L | 19 | $1.5590 $1.7715 | ||
| LJP30120 | luJing | TO-220AC | 137 | $1.9811 $2.0853 | ||
| STPSC20H12DY | ST | TO-220-2 | 1 | $ 13.7438 | ||
| KS10065-A | SGKS | TO-220-2L | 48 | $ 1.595 | ||
| ASZD010120A | AnBon | TO-220-2 | 17 | $1.7133 $1.8034 | ||
| LJP10170 | luJing | TO-220-2L | 110 | $1.6009 $1.8191 | ||
| GC4D10120A | SUPSiC | TO-220-2 | 209 | $ 1.5117 | ||
| SP20D120CTR | Siliup | TO-220-2L | 97 | $ 1.3009 | ||
| LGE3D10120A | LGE | TO-220AC | 99 | $ 2.1004 | ||
| WS4A020065A | CETC | TO-220-2 | 40 | $ 1.4479 | ||
| HC4D08120A | HXY MOSFET | TO-220-2L | 0 | $ 1.8664 | ||
| WS3A010065A | CETC | TO-220-2 | 0 | $ 2.0488 |