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LRC LP3443LT1G
| Manufacturer | LRCAsian Brands |
| MPN | LP3443LT1G |
| LCSC Part # | C354989 |
| Packaging | SOT-23E |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4.7A SOT-23E |
| Datasheet | LRC LP3443LT1G |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | LRC | |
| Packaging | SOT-23E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 88.5pF | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74.8pF | |
| RDS(on) | 110mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 797.3pF | |
| Gate Charge(Qg) | 16.6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | LRC | |
| Packaging | SOT-23E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 88.5pF | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74.8pF | |
| RDS(on) | 110mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 797.3pF | |
| Gate Charge(Qg) | 16.6nC@10V | |
| Type | P-Channel |
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Features
AI Translation
- VDS = -20V
- RDS(ON) ≤ 70mΩ, @VGS = 4.5V, IDS = 4.7A
- RDS(ON) ≤ 110mΩ, @VGS = 2.5V, IDS = -1.0A
- We declare that the material of product compliance with RoHS requirements and Halogen Free
- S- prefix for automotive and other applications requiring unique site and control change requirements; AEC - Q101 qualified and PPAP capable
- ESD rating of class 0 (<100V) per Human Body Model
Applications
AI Translation
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
In-Stock: 8,090
8,090 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0696 | $ 0.70 |
| 100+ | $ 0.0554 | $ 5.54 |
| 300+ | $ 0.0483 | $ 14.49 |
| 3,000+ | $ 0.0427 | $ 128.10 |
| 6,000+ | $ 0.0384 | $ 230.40 |
| 9,000+ | $ 0.0363 | $ 326.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | LRC | |
| Packaging | SOT-23E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 88.5pF | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74.8pF | |
| RDS(on) | 110mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 797.3pF | |
| Gate Charge(Qg) | 16.6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | LRC | |
| Packaging | SOT-23E | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 88.5pF | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74.8pF | |
| RDS(on) | 110mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 797.3pF | |
| Gate Charge(Qg) | 16.6nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- VDS = -20V
- RDS(ON) ≤ 70mΩ, @VGS = 4.5V, IDS = 4.7A
- RDS(ON) ≤ 110mΩ, @VGS = 2.5V, IDS = -1.0A
- We declare that the material of product compliance with RoHS requirements and Halogen Free
- S- prefix for automotive and other applications requiring unique site and control change requirements; AEC - Q101 qualified and PPAP capable
- ESD rating of class 0 (<100V) per Human Body Model
Applications
AI Translation
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
C354989 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| LP9435LT1G | LRC | SOT-23 | 2,330 | $ 0.0633 | ||
| LPB3408LT1G | LRC | SOT-23LC | 0 | $ 0.4629 |