TI IRFU9220
| Manufacturer | |
| MPN | IRFU9220 |
| LCSC Part # | C3281209 |
| Packaging | TO-251AA |
| Customer # | |
| Key Attributes | P-Channel, Current:3.6A, Voltage:200V |
| Datasheet | TI IRFU9220 |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-251AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-251AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Type | P-Channel |
Introduction
These are advanced power MOSFETs designed, tested, and guaranteed to withstand specified energy levels in the avalanche breakdown operating mode. They are P-channel enhancement-mode silicon-gate power FETs suitable for applications including switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Features
- 3.6A, 200V
- rDS(ON) = 1.500Ω
- Temperature-compensated PSPICE model
- Peak current vs. pulse width curve
- Single-pulse avalanche energy (UIS) rating curve
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5092 | $ 0.51 |
| 200+ | $ 0.1976 | $ 39.52 |
| 500+ | $ 0.1898 | $ 94.90 |
| 1,000+ | $ 0.1867 | $ 186.70 |
Standard Packaging75/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-251AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-251AA | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Type | P-Channel |
Introduction
These are advanced power MOSFETs designed, tested, and guaranteed to withstand specified energy levels in the avalanche breakdown operating mode. They are P-channel enhancement-mode silicon-gate power FETs suitable for applications including switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Features
- 3.6A, 200V
- rDS(ON) = 1.500Ω
- Temperature-compensated PSPICE model
- Peak current vs. pulse width curve
- Single-pulse avalanche energy (UIS) rating curve
C3281209 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFU9220PBF | VISHAY | TO-251-3 | 61 | $ 6.4192 | ||
| DMP45H4D9HJ3 | DIODES | TO-251-3 | 14 | $ 1.0106 | ||
| SFU9230BTU | onsemi | IPAK | 0 | $ 0.3423 | ||
| VBFB2201K | VBsemi Elec | TO-251 | 0 | $ 0.8361 | ||
| FQU5P20TU | onsemi | TO-251-3 | 0 | $ 0.4995 |