MCC MCM1208-TP
| Manufacturer | |
| MPN | MCM1208-TP |
| LCSC Part # | C3277695 |
| Packaging | DFN2020-6J |
| Customer # | |
| Key Attributes | P-Channel, Current:8A, Voltage:12V |
| Datasheet | MCC MCM1208-TP |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MCC | |
| Packaging | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MCC | |
| Packaging | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement mode power MOSFETs. Power MOS 7° addresses conduction loss and switching loss by significantly reducing RDS(ON) and gate charge Qg. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of APT's patented metal gate structure.
Features
AI Translation
- Advanced trench MOSFET process technology
- Ultra-low on-resistance and low gate charge
- Epoxy meets UL 94 V-0 flammability rating
- Moisture sensitivity level 1
- Halogen-free, "green" device
- Lead-free surface finish / RoHS compliant (suffix "P" denotes RoHS compliant)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MCC | |
| Packaging | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MCC | |
| Packaging | DFN2020-6J | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 1.275nF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 12V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 150mΩ@1.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement mode power MOSFETs. Power MOS 7° addresses conduction loss and switching loss by significantly reducing RDS(ON) and gate charge Qg. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of APT's patented metal gate structure.
Features
AI Translation
- Advanced trench MOSFET process technology
- Ultra-low on-resistance and low gate charge
- Epoxy meets UL 94 V-0 flammability rating
- Moisture sensitivity level 1
- Halogen-free, "green" device
- Lead-free surface finish / RoHS compliant (suffix "P" denotes RoHS compliant)
C3277695 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

