Excelitas Technologies C30739ECERH

The C30739ECERH large-area silicon avalanche photodiode (APD) is designed for a wide range of broadband low-light-level applications, covering a spectral range from below 400nm to beyond 700nm. The device is engineered to enhance short-wavelength responsivity, with a typical quantum efficiency exceeding 80% at 430nm. In addition, this large-area APD is optimized for low noise and low capacitance (60pF). A special high-gain version achieves avalanche gain up to M = 400 at 430nm. The standard ceramic carrier package facilitates handling and enables coupling to scintillation crystals such as LSO and BGO. Combined with excellent short-wavelength response capability, this APD is ideally suited for high-performance, high-volume applications such as positron emission tomography (PET).

• Large-area silicon APD
• Enhanced short-wavelength responsivity
• High quantum efficiency (80%) at short wavelength (430nm)
• Easy coupling with scintillation crystals
• Non-magnetic package
• Customizable package
• Excellent timing resolution
• RoHS compliant

• Molecular imaging (PET)
• Nuclear medicine
• Fluorescence detection
• High-energy physics
• Security radiation detection
• Optical tomography
• Environmental monitoring