Infineon BGA9H1BN6327XTSA1

BGA9H1BN6 is a low noise amplifier designed for 4G and 5G, covering a wide frequency range from 2.3 GHz to 2.7 GHz. In the application configuration described in Chapter 4, this LNA delivers up to 20.3 dB gain and 0.6 dB noise figure at a current consumption of 5.5 mA. The multi-state function allows gain adjustment for improved system dynamic performance, along with power-saving options. The two-wire state control is fully backward compatible with standard GPIO-controlled LNAs. BGA9H1BN6 supports an ultra-low bypass current of 0.6 μA and an operating voltage of 1.2 V to reduce power consumption. It operates across the full temperature range with supply voltages from 1.1 V to 3.3 V. The compact 6-pin TSNP-6 package measuring 1.1×0.7 mm² helps save PCB space.

• Insertion power gain: 20.3 dB max
• Insertion loss in bypass mode: 4.3 dB
• Low noise figure: 0.6 dB
• Low current consumption: 2.2 mA min
• Operating frequency: 2.3 to 2.7 GHz
• Multi-state control
• Supply voltage: 1.1 V to 3.3 V
• Ultra-compact TSNP-6-10 leadless package (dimensions: 0.7×1.1×0.37 mm³)
• SiGe BiCMOS technology
• RF output internally matched to 50 ohms
• Single external matching component required
• RoHS and WEEE compliant package

• 4G and 5G applications
• Wearable devices
• Smartphones