onsemi NTMTSC4D3N15MC
| Manufacturer | |
| MPN | NTMTSC4D3N15MC |
| LCSC Part # | C2902181 |
| Packaging | TDFNW-8(8.3x8.4) |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 174A TDFNW-8(8.3x8.4) |
| Datasheet | onsemi NTMTSC4D3N15MC |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TDFNW-8(8.3x8.4) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 1.75nF | |
| Current - Continuous Drain(Id) | 174A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 293W | |
| RDS(on) | 4.45mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.514nF | |
| Gate Charge(Qg) | 79nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TDFNW-8(8.3x8.4) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 1.75nF | |
| Current - Continuous Drain(Id) | 174A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 293W | |
| RDS(on) | 4.45mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.514nF | |
| Gate Charge(Qg) | 79nC@10V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III FAST MOSFET series helps reduce the size and improve the efficiency of various power supply systems.
Features
- Small Footprint <8x8 mm> for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- Power Tools, Battery Operated Vacuums
- UAV/Drones, Material Handling
- BMS/Storage, Home Automation
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 8.7746 | $ 8.77 |
| 10+ | $ 7.9558 | $ 79.56 |
| 30+ | $ 7.4554 | $ 223.66 |
| 100+ | $ 7.0363 | $ 703.63 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TDFNW-8(8.3x8.4) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 1.75nF | |
| Current - Continuous Drain(Id) | 174A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 293W | |
| RDS(on) | 4.45mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.514nF | |
| Gate Charge(Qg) | 79nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TDFNW-8(8.3x8.4) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 1.75nF | |
| Current - Continuous Drain(Id) | 174A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 293W | |
| RDS(on) | 4.45mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.514nF | |
| Gate Charge(Qg) | 79nC@10V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III FAST MOSFET series helps reduce the size and improve the efficiency of various power supply systems.
Features
- Small Footprint <8x8 mm> for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- Power Tools, Battery Operated Vacuums
- UAV/Drones, Material Handling
- BMS/Storage, Home Automation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTMTS4D3N15MC | onsemi | PowerTDFN-8(7.9x8) | 0 | $ 10.4366 | ||
| NVMTS4D3N15MC | onsemi | PowerTDFN-8(7.9x8) | 0 | $ 8.4481 | ||
| NVMTSC4D3N15MC | onsemi | TDFN-8-W(8.3x8.4) | 0 | $ 5.2188 |



