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HUAYI HYG023N04LS1P
| Manufacturer | HUAYIAsian Brands |
| MPN | HYG023N04LS1P |
| LCSC Part # | C2895306 |
| Packaging | TO-220FB |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 170A TO-220FB |
| Datasheet | HUAYI HYG023N04LS1P |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUAYI | |
| Packaging | TO-220FB | |
| Output Capacitance(Coss) | 809pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 170A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 2.9mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.032nF | |
| Gate Charge(Qg) | 58.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUAYI | |
| Packaging | TO-220FB | |
| Output Capacitance(Coss) | 809pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 170A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 2.9mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.032nF | |
| Gate Charge(Qg) | 58.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The third-generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. For commercial and industrial applications with higher power requirements where TO-220AB devices are not suitable, the TO-247AC package is the preferred choice. The TO-247AC is similar to the earlier TO-218 package but offers superior performance due to its insulated mounting hole. It also provides greater creepage distance between leads to meet the requirements of most safety regulations.
Features
- 40V/170A
- RDS(ON)=2.1mΩ (typ.) @ VGS=10V
- RDS(ON)=2.9mΩ (typ.) @ VGS=4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Lead-Free and Green Devices Available (RoHS Compliant)
Applications
- Power Management for DC/DC
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5897 | $ 0.59 |
| 10+ | $ 0.4813 | $ 4.81 |
| 30+ | $ 0.4271 | $ 12.81 |
| 100+ | $ 0.3729 | $ 37.29 |
| 500+ | $ 0.3269 | $ 163.45 |
| 1,000+ | $ 0.3088 | $ 308.80 |
Standard Packaging1000/Full Box | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUAYI | |
| Packaging | TO-220FB | |
| Output Capacitance(Coss) | 809pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 170A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 2.9mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.032nF | |
| Gate Charge(Qg) | 58.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUAYI | |
| Packaging | TO-220FB | |
| Output Capacitance(Coss) | 809pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 170A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 2.9mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.032nF | |
| Gate Charge(Qg) | 58.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The third-generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. For commercial and industrial applications with higher power requirements where TO-220AB devices are not suitable, the TO-247AC package is the preferred choice. The TO-247AC is similar to the earlier TO-218 package but offers superior performance due to its insulated mounting hole. It also provides greater creepage distance between leads to meet the requirements of most safety regulations.
Features
- 40V/170A
- RDS(ON)=2.1mΩ (typ.) @ VGS=10V
- RDS(ON)=2.9mΩ (typ.) @ VGS=4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Lead-Free and Green Devices Available (RoHS Compliant)
Applications
- Power Management for DC/DC
C2895306 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HYG023N04LQ1P | HUAYI | Similar | TO-220FB | 1 | $ 0.6639 | ||
| HYG050N13NS1P | HUAYI | Similar | TO-220FB-3L | 5 | $2.2398 $2.4886 | ||
| HYG020N04NR1P | HUAYI | Similar | TO-220FB-3L | 200 | $ 0.6224 | ||
| HY4504P | HUAYI | Similar | TO-220FB | 2 | $ 0.9384 | ||
| HYG028N10NS1P | HUAYI | Similar | TO-220FB-3L | 254 | $ 1.2061 |