JSMSEMI 2N5401
| Fabricante | JSMSEMIAsian Brands |
| N.º de pieza fab. | 2N5401 |
| Nº LCSC | C2874604 |
| Emb. | TO-92 |
| Número de Cliente | |
| Atrib. clave | TRANS PNP 150V 0.6A TO-92 |
| Hoja de Datos | JSMSEMI 2N5401 |
| Cumplimiento RoHS | 4 documentos disponibles |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | JSMSEMI | |
| Emb. | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 150 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | JSMSEMI | |
| Emb. | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| Emitter-Base Voltage VEBO | 5V |
| Tipo | Descripción | |
|---|---|---|
| DC Current Gain | 150 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Switching and Amplification in High Voltage Applications such as Telephony
- Low Current(Max. 600mA)
- High Voltage(Max.160v)
En stock: 1,650
1,650 En stock, envío inmediato
Mínimo: 50Múltiplo: 50Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 50+ | $ 0.0163$ 0.0131 | $ 0.66 |
| 500+ | $ 0.0128$ 0.0103 | $ 5.15 |
| 2,000+ | $ 0.0113$ 0.0091 | $ 18.20 |
| 5,000+ | $ 0.0102$ 0.0082 | $ 41.00 |
| 25,000+ | $ 0.0091$ 0.0073 | $ 182.50 |
| 50,000+ | $ 0.0086$ 0.0069 | $ 345.00 |
Encapsulado Estándar1000/Full Bag | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | JSMSEMI | |
| Emb. | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 150 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | JSMSEMI | |
| Emb. | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| Emitter-Base Voltage VEBO | 5V |
| Tipo | Descripción | |
|---|---|---|
| DC Current Gain | 150 | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Switching and Amplification in High Voltage Applications such as Telephony
- Low Current(Max. 600mA)
- High Voltage(Max.160v)
C2874604 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



