HUASHUO HSM24P03
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSM24P03 |
| LCSC Part # | C2828488 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 24A SOP-8 |
| Datasheet | HUASHUO HSM24P03 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 410pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.24nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 410pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.24nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSM24P03 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSM24P03 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 2,029
2,029 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5655 | $ 0.57 |
| 10+ | $ 0.4593 | $ 4.59 |
| 30+ | $ 0.4135 | $ 12.41 |
| 100+ | $ 0.3563 | $ 35.63 |
| 500+ | $ 0.3024 | $ 151.20 |
| 1,000+ | $ 0.2877 | $ 287.70 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 410pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.24nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 410pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.24nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSM24P03 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSM24P03 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C2828488 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



