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MXIC MX25L8006EM2I-12GTR

Fabricante
N.º de pieza fab.
MX25L8006EM2I-12GTR
Nº LCSC
C2802804
Emb.
SOP-8-208mil
Número de Cliente
Atrib. clave
3V,8M-BIT[x1/x2] CMOSSERIALFLASHMEMORY
Hoja de DatosMXIC MX25L8006EM2I-12GTR
Piezas alternativas10
En stock: 562
562 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
Cant.Prec. unit.Importo total
1+$ 0.5943$ 0.59
10+$ 0.4898$ 4.90
30+$ 0.4441$ 13.32
100+$ 0.3886$ 38.86
500+$ 0.3641$ 182.05
1,000+$ 0.3494$ 349.40
Encapsulado Estándar2000/Full Reel
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Especificaciones del Producto

Todo
TipoDescripción
CategoríaIntegrated Circuits (ICs)/Memory/Memory
FabricanteMXIC
Emb.SOP-8-208mil
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size8Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency86MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)400ms@(64KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)3ms
Standby Supply Current15uA
InterfaceSPI

Descripción

Traducción por IA

This device is a 3V, 8Mb serial Flash memory fabricated in CMOS process, supporting x1 or x2 bus width configurations. It operates from a single power supply with a voltage range of 2.7V to 3.6V for read, erase, and program operations. The device supports SPI modes 0 and 3. Memory organization is 8,388,608 x 1-bit or 4,194,304 x 2-bit, comprising 256 uniformly sized 4KB sectors, each independently erasable. The memory is also divided into 16 uniformly sized 64KB blocks, each independently erasable. Programming supports both byte-based and page-based operations. The device provides latch-up protection.

In terms of performance, it offers fast access times with support for an 86MHz serial clock and 80MHz serial clock in dual-output mode. Fast programming speed with a typical page program time of 0.6ms and a maximum of 3ms/page; typical byte program time of 9µs. Fast erase speed with a typical sector erase time of 40ms and a typical block erase time of 0.4s. Low power consumption: maximum read current of 12mA at 86MHz, typical program current of 15mA, typical sector/block erase current of 9mA, typical standby current of 15µA, and typical deep power-down current of 2µA. Typical endurance of 100,000 erase/program cycles with a 20-year data retention.

Software features include: 1-byte command code format; advanced security features such as block lock protection defined by BP2–BP0 status bits for software-protecting specified regions against program and erase commands, plus an additional 512-bit security OTP area for identifiers; auto-erase and auto-program algorithms that automatically erase and verify selected sectors and automatically program and verify selected pages; status register functionality; electronic identification supporting JEDEC-standard 1-byte manufacturer ID and 2-byte device ID, RES command for reading 1-byte device ID, and REMS command for reading 1-byte manufacturer ID and 1-byte device ID; Serial Flash Discoverable Parameters (SFDP) mode support. Hardware features offer multiple package options.

Características

Traducción por IA
  • Hold Feature
  • Low Power Consumption
  • Auto Erase and Auto Program Algorithms
  • Additional 512 bit secured OTP for unique identifier
  • Single Power Supply Operation
  • 2.7 to 3.6 volt for read, erase, and program operations
  • Supports Serial Peripheral Interface - Mode 0 and Mode 3
  • 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (Dual Output mode) structure
  • 256 Equal Sectors with 4K byte each
  • Any Sector can be erased individually
  • 16 Equal Blocks with 64K byte each
  • Any Block can be erased individually
  • Program Capability: Byte base; Page base (256 bytes)
  • Latch-up protected to 100mA from - 1V to Vcc +1V
  • High Performance
  • Fast access time: 86MHz serial clock
  • Serial clock of Dual Output mode : 80MHz
  • Fast program time: 0.6ms(typ.) and 3ms(max.)/page
  • Byte program time: 9us (typical)
  • Fast erase time: 40ms(typ.) /sector ; 0.4s(typ.) /block
  • Low active read current: 12mA(max.) at 86MHz
  • Low active programming current: 15mA (typ.)
  • Low active Sector/Block erase current: 9mA (typ.)
  • Low standby current: 15uA (typ.)
  • Deep power-down mode 2uA (typ.)
  • Typical 100,000 erase/program cycles
  • 20 years of data retention
  • Input Data Format: 1-byte Command code
  • Advanced Security Features: Block lock protection. The BP2 - BP0 status bit defines the size of the area to be software protection against program and erase instructions
  • Auto Erase and Auto Program Algorithm: Automatically erases and verifies data at selected sector; Automatically programs and verifies data at selected page by an internal algorithm that automatically times the program pulse widths (Any page to be programmed should have page in the erased state first)
  • Status Register Feature: Electronic Identification; JEDEC 1-byte manufacturer ID and 2-byte device ID; RES command for 1-byte Device ID; REMS command for 1-byte manufacturer ID and 1-byte device ID; Support Serial Flash Discoverable Parameters (SFDP) mode
  • PACKAGE: 8-pin SOP (150mil); 8-pin SOP (200mil); 8-pin PDIP (300mil); 8-land WSON (6x5mm); 8-land USON (4x4mm); All devices are RoHS Compliant and Halogen-free

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