LCSC Electronics logoLCSC Electronics svg logo
Iniciar sesión
USD
Carrito
GigaDevice Semicon Beijing GD55LE511MEWIGR product image
Imágenes ilustrativas

GigaDevice Semicon Beijing GD55LE511MEWIGR

Fabricante
GigaDevice Semicon BeijingAsian Brands
N.º de pieza fab.
GD55LE511MEWIGR
Nº LCSC
C21296416
Emb.
-
Número de Cliente
Atrib. clave
512Mbit 1.65V~2V 133MHz SPI Memory
Hoja de DatosGigaDevice Semicon Beijing GD55LE511MEWIGR
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
Cant.Prec. unit.(Solo como referencia)Importo total
1+$ 4.9839$ 4.98
200+$ 1.9884$ 397.68
500+$ 1.9223$ 961.15
1,000+$ 1.8901$ 1890.10
Encapsulado Estándar3000/Full Reel
¿Mejor precio por mayor cantidad?
$

Especificaciones del Producto

Todo
TipoDescripción
CategoríaIntegrated Circuits (ICs)/Memory/Memory
FabricanteGigaDevice Semicon Beijing
Emb.-
Operating Temperature-40℃~+85℃
Features-
Memory Size512Mbit
Voltage - Supply1.65V~2V
Clock Frequency133MHz
InterfaceSPI
Ayuda y comentariosMostrar productos similares (0) >

Características

Traducción por IA
  • Power Supply Voltage: 2.7V~3.6V
  • High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
  • Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
  • Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
  • Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
  • Power Supply Voltage: 1.7V~2.0V
  • High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
  • Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
  • Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
  • Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC