Infineon CY15B104QN-20BFXI
| Manufacturer | |
| MPN | CY15B104QN-20BFXI |
| LCSC Part # | C21290330 |
| Packaging | - |
| Customer # | |
| Key Attributes | 4Mbit 50MHz SPI Memory RoHS |
| Datasheet | Infineon CY15B104QN-20BFXI |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Memory Size | 4Mbit | |
| Sleep mode current (Izz) | - | |
| Voltage - Supply | 1.8V~3.6V;- | |
| Program / Erase Cycles | 1,000,000,000,000,000 cycles | |
| Clock Frequency | 50MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 2.3uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Memory Size | 4Mbit | |
| Sleep mode current (Izz) | - |
| Type | Description | |
|---|---|---|
| Voltage - Supply | 1.8V~3.6V;- | |
| Program / Erase Cycles | 1,000,000,000,000,000 cycles | |
| Clock Frequency | 50MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 2.3uA | |
| Interface | SPI |
Introduction
The EXCELON LP CY15X104QN is a low-power, 4-Megabit nonvolatile memory utilizing an advanced ferroelectric process. Ferroelectric RAM is nonvolatile and performs reads and writes similar to RAM. It eliminates the complexities, overhead, and system-level reliability issues of serial Flash, EEPROM, and other nonvolatile memories while delivering 151 years of reliable data retention. Unlike serial Flash and EEPROM, the CY15X104QN performs write operations at bus speed with no write delay. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can begin immediately with no need for data polling. In addition, the device offers significantly higher write endurance than other nonvolatile memories. The CY15X104QN supports 10^15 read/write cycles — 1,000 million times more write cycles than EEPROM. These characteristics make it an ideal choice for nonvolatile memory applications requiring frequent or high-speed writes. The device employs a high-speed SPI bus, further enhancing the high-speed write capability of ferroelectric memory technology. It includes read-only device identification and ID functions, allowing the host to determine the manufacturer, product density, product revision, and the identification of each part. The device also provides a writable 8-byte serial number register that can be used to identify a specific board or system.
Features
- 4-Megabit FRAM, organized as 512K × 8
- Unlimited endurance: 100 trillion (10^14) read/write cycles
- 151-year data retention
- Instant nonvolatile write
- Advanced high-reliability ferroelectric process
- Fast SPI
- Frequency up to 50 MHz
- Supports SPI mode 0 and mode 3
- Comprehensive write protection: hardware write-protect pin and software write-disable instruction
- Software block protection for 1/4, 1/2, or full array
- Device ID and serial number: manufacturer ID, product ID, and identifier
- Dedicated 256-byte Special Sector FRAM with contents surviving up to 3 standard reflow cycles
- Low power: typical active current 2.4 mA at 40 MHz, typical standby current 2.3 μA, typical deep power-down current 0.70 μA, typical hibernate current 0.1 μA
- Low-voltage operation: CY15V104QN 1.71 V to 1.89 V, CY15B104QN 1.8 V to 3.6 V
- Commercial and industrial temperature ranges: commercial 0°C to +70°C, industrial −40°C to +85°C
- Package options: 8-pin SOIC, 8-pin LGA QFN, and 8-pin WLCSP
- RoHS compliant
Applications
- Data acquisition
- Industrial control
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 18.7302 | $ 18.73 |
| 200+ | $ 7.4746 | $ 1494.92 |
| 500+ | $ 7.2247 | $ 3612.35 |
| 1,000+ | $ 7.1005 | $ 7100.50 |
Standard Packaging4900/Full Tray | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Memory Size | 4Mbit | |
| Sleep mode current (Izz) | - | |
| Voltage - Supply | 1.8V~3.6V;- | |
| Program / Erase Cycles | 1,000,000,000,000,000 cycles | |
| Clock Frequency | 50MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 2.3uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Operating status indication | |
| Memory Size | 4Mbit | |
| Sleep mode current (Izz) | - |
| Type | Description | |
|---|---|---|
| Voltage - Supply | 1.8V~3.6V;- | |
| Program / Erase Cycles | 1,000,000,000,000,000 cycles | |
| Clock Frequency | 50MHz | |
| Data Retention - TDR (Year) | 151 years | |
| Standby Supply Current | 2.3uA | |
| Interface | SPI |
Introduction
The EXCELON LP CY15X104QN is a low-power, 4-Megabit nonvolatile memory utilizing an advanced ferroelectric process. Ferroelectric RAM is nonvolatile and performs reads and writes similar to RAM. It eliminates the complexities, overhead, and system-level reliability issues of serial Flash, EEPROM, and other nonvolatile memories while delivering 151 years of reliable data retention. Unlike serial Flash and EEPROM, the CY15X104QN performs write operations at bus speed with no write delay. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can begin immediately with no need for data polling. In addition, the device offers significantly higher write endurance than other nonvolatile memories. The CY15X104QN supports 10^15 read/write cycles — 1,000 million times more write cycles than EEPROM. These characteristics make it an ideal choice for nonvolatile memory applications requiring frequent or high-speed writes. The device employs a high-speed SPI bus, further enhancing the high-speed write capability of ferroelectric memory technology. It includes read-only device identification and ID functions, allowing the host to determine the manufacturer, product density, product revision, and the identification of each part. The device also provides a writable 8-byte serial number register that can be used to identify a specific board or system.
Features
- 4-Megabit FRAM, organized as 512K × 8
- Unlimited endurance: 100 trillion (10^14) read/write cycles
- 151-year data retention
- Instant nonvolatile write
- Advanced high-reliability ferroelectric process
- Fast SPI
- Frequency up to 50 MHz
- Supports SPI mode 0 and mode 3
- Comprehensive write protection: hardware write-protect pin and software write-disable instruction
- Software block protection for 1/4, 1/2, or full array
- Device ID and serial number: manufacturer ID, product ID, and identifier
- Dedicated 256-byte Special Sector FRAM with contents surviving up to 3 standard reflow cycles
- Low power: typical active current 2.4 mA at 40 MHz, typical standby current 2.3 μA, typical deep power-down current 0.70 μA, typical hibernate current 0.1 μA
- Low-voltage operation: CY15V104QN 1.71 V to 1.89 V, CY15B104QN 1.8 V to 3.6 V
- Commercial and industrial temperature ranges: commercial 0°C to +70°C, industrial −40°C to +85°C
- Package options: 8-pin SOIC, 8-pin LGA QFN, and 8-pin WLCSP
- RoHS compliant
Applications
- Data acquisition
- Industrial control
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CY15B104QN-20BFXIT | Infineon | - | 0 | $ 18.0373 |

