MACOM DU2820S
| Manufacturer | |
| MPN | DU2820S |
| LCSC Part # | C20344000 |
| Packaging | - |
| Customer # | |
| Key Attributes | 65V 24A 6V 62.5W RF FETs, MOSFETs |
| Datasheet | MACOM DU2820S |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 24A | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 6V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Input Capacitance(Ciss) | 45pF | |
| Output Capacitance(Coss) | 40pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 24A | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 6V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Input Capacitance(Ciss) | 45pF | |
| Output Capacitance(Coss) | 40pF |
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Introduction
AI Translation
600 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 616 MHz to 960 MHz.
Features
AI Translation
- N-channel enhancement-mode device
- DMOS structure
- Low capacitance for wideband operation
- High saturated output power
- Lower noise figure than bipolar devices
- RoHS compliant
Applications
AI Translation
- RF power amplifier for base station and multi-carrier applications in the 616 MHz to 960 MHz frequency range
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 39.9485 | $ 39.95 |
| 200+ | $ 15.9398 | $ 3187.96 |
| 500+ | $ 15.4076 | $ 7703.80 |
| 1,000+ | $ 15.1447 | $ 15144.70 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 24A | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 6V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Input Capacitance(Ciss) | 45pF | |
| Output Capacitance(Coss) | 40pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 24A | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 6V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Input Capacitance(Ciss) | 45pF | |
| Output Capacitance(Coss) | 40pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
600 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 616 MHz to 960 MHz.
Features
AI Translation
- N-channel enhancement-mode device
- DMOS structure
- Low capacitance for wideband operation
- High saturated output power
- Lower noise figure than bipolar devices
- RoHS compliant
Applications
AI Translation
- RF power amplifier for base station and multi-carrier applications in the 616 MHz to 960 MHz frequency range
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

