Infineon CY15B108QSN-108BKXQ

The EXCELON™ Ultra CY15x108QSN is a high-performance 8 Mb nonvolatile memory utilizing an advanced ferroelectric process. Ferroelectric RAM (F-RAM) is nonvolatile and performs read and write operations similarly to RAM. It reliably retains data for 151 years while eliminating the complexity, overhead, and system-level reliability issues associated with serial Flash and other nonvolatile memories. Unlike serial Flash, the CY15x108QSN performs write operations at bus speed with no write delays. After each byte is successfully transferred to the device, data is immediately written to the memory array, and the next bus cycle can begin without data polling. In addition, the device offers significantly greater write endurance compared to other nonvolatile memories. The CY15x108QSN supports 10¹⁴ read/write cycles — 100 million times more write cycles than EEPROM. These characteristics make the CY15x108QSN ideal for nonvolatile memory applications requiring frequent or high-speed writes. For example, in data logging applications where write cycle count may be critical, or in demanding industrial control applications where the long write times of serial Flash can result in data loss. The CY15x108QSN combines 8 Mb F-RAM with a high-speed Quad SPI (QPI) single data rate (SDR) and double data rate (DDR) interface, enhancing the nonvolatile write capability of F-RAM technology. The device integrates a read-only device ID and unique ID feature, enabling the SPI bus master to identify each component's manufacturer, product density, product revision, and unique ID. The device also provides a read-only unique serial number that can be used to identify a board or system. The device supports on-chip ECC logic capable of detecting and correcting 2-bit errors per 8-byte data unit, and reporting 3-bit errors per 8-byte data unit. The CY15x108QSN also supports a cyclic redundancy check (CRC) function for verifying the integrity of data stored in the memory array. Low-voltage operation:

• CY15V108QSN: VDD = 1.71 V to 1.89 V
• CY15B108QSN: VDD = 1.8 V to 3.6 V Operating temperature:
• Extended industrial (Q): -40°C to +105°C Package:
• 24-ball Fine-pitch BGA (FBGA) RoHS compliant.

• 8 Mb F-RAM, organized as 1024 K × 8
• Near-unlimited endurance up to 100 trillion (10¹⁴) read/write cycles
• 151-year data retention
• Infineon instant nonvolatile write technology
• Advanced high-reliability ferroelectric process
• Single I/O and multi-I/O SPI
• Serial bus interface SPI protocol
• SPI mode 0 (0, 0) and mode 3 (1, 1) supporting all SDR mode transfers
• SPI mode 0 (0, 0) supporting all DDR mode transfers
• Extended I/O SPI protocol
• Dual SPI (DPI) protocol
• Quad SPI (QPI) protocol
• SPI clock frequency:
  • SPI SDR up to 108 MHz
  • SPI DDR up to 46 MHz
• Execute-in-Place (XIP) for memory read and write
• Write protection, data security, and data integrity:
  • Hardware protection via write protect (WP) pin
  • Software block protection
• Embedded ECC and CRC for enhanced data integrity:
  • ECC detects and corrects 2-bit errors; 3-bit errors are reported via ECC status register without correction
  • CRC detects any unintended changes to raw data
• Extended electronic signature:
  • Device ID including manufacturer ID and product ID
  • Unique ID
  • User-programmable serial number
• Dedicated 256-byte special sector F-RAM:
  • Dedicated special sector read/write
  • Contents survive up to three standard reflow cycles
• Low power at high speed:
  • Typical active current 12 mA at 108 MHz SPI SDR
  • Typical active current 20 mA at 108 MHz QSPI SDR
  • Typical active current 15.5 mA at 46 MHz QSPI DDR
  • Typical standby current 105 μA
  • Typical deep power-down current 1.1 μA
  • Typical Hibernate mode current 0.1 μA