micron PF48F3000P0ZTQEA

P30-65nm SBC device is offered in 64-Mbit and 128-Mbit. Benefits include high-speed interface NOR device, and support for code and data storage. Features include highperformance synchronous-burst read mode, a dramatical improvement in buffer program time through larger buffer size, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. P30-65nm SBC device is manufactured using 65nm process technology. P30-65nm SBC device provides high performance on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the Read Configuration Register (RCR) enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast buffer program and erase operations. The device features a 256-word buffer to enable optimum programming performance, which can improve system programming throughput time significantly to 1.8MByte/s. Designed for low-voltage systems, the P30-65nm SBC device supports read operations with VCC at 1.8V, and erase and program operations with VPP at 1.8V or 9.0V. Buffered Enhanced Factory Programming provides the fastest flash array programming performance with VPP at 9.0V, which increases factory throughput with 3.2Mbyte/s. With VPP at 1.8V, VCC and VPP can be tied together for a simple, ultra low power design. In addition to voltage flexibility, a dedicated VPP connection provides complete data protection when VPP ≤ VPPLK.

• High Performance:
  • 65ns initial access time for Easy BGA and QUAD+
  • 75ns initial access time for TSOP
  • 25ns 8-word asynchronous-page read mode
  • 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode
  • 4-, 8-, 16- and continuous-word options for burst mode
  • 1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer
  • Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer
• Architecture:
  • Asymmetrically-blocked architecture
  • Four 32-KByte parameter blocks: top or bottom configuration
  • 128-KByte array blocks
  • Blank Check to verify an erased block
• Voltage and Power:
  • VCC (core) voltage: 1.7V – 2.0V
  • VCCQ (I/O) voltage: 1.7V - 3.6V
  • Standby current: 30μA(Typ)/55μA(Max)
  • Continuous synchronous read current: 23mA (Typ)/28mA (Max) at 52MHz
• Enhanced Security:
  • Absolute write protection: VPP = Vss
  • Power-transition erase/program lockout
  • Individual zero-latency block locking
  • Individual block lock-down capability
  • Password Access feature
  • One-Time Programmable Register:
    • 64 OTP bits, programmed with unique information by Numonyx
    • 2112 OTP bits, available for customer programming
• Software:
  • 20µs (Typ) program suspend
  • 20µs (Typ) erase suspend
  • Basic Command Set and Extended Function Interface (EFI) Command Set compatible
  • Common Flash Interface capable
• Density and Packaging:
  • 56-Lead TSOP (128-Mbit, 64-Mbit)
  • 64-Ball Easy BGA (128-Mbit, 64-Mbit)
  • 88-Ball QUAD+ Package (128-Mbit)
  • 16-bit wide data bus
• Quality and Reliability:
  • JESD47E Compliant
  • Operating temperature: -40℃ to +85℃
  • Minimum 100,000 erase cycles
  • 65nm process technology