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onsemi SBC847BPDW1T1G

Manufacturer
MPN
SBC847BPDW1T1G
LCSC Part #
C185062
Packaging
SOT-363
Customer #
Key Attributes
TRANS NPN+PNP 65V 100mA SOT-363
Datasheetonsemi SBC847BPDW1T1G
RoHS Compliance2 documents available
Alternative Parts3
Out of Stock
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Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.0703$ 0.35
50+$ 0.0548$ 2.74
150+$ 0.0471$ 7.07
500+$ 0.0413$ 20.65
3,000+$ 0.0366$ 109.80
6,000+$ 0.0343$ 205.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff15nA
DC Current Gain150
Pd - Power Dissipation380mW
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Introduction

AI Translation

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

Features

AI Translation
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
BC846BPDW1T1GonsemiSOT-36349,890$ 0.0567
SBC846BPDW1T1GonsemiSOT-3631,220$ 0.1554
BC847BPN,115NexperiaTSSOP-6(SOT-363)9,795$ 0.1167