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ANHI ASB65R220E

Manufacturer
ANHIAsian Brands
MPN
ASB65R220E
LCSC Part #
C18199767
Packaging
TO-263
Customer #
Key Attributes
MOSFET N-CH 650V 20A TO-263
DatasheetANHI ASB65R220E
Alternative Parts1
In-Stock: 146
146 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.109$ 1.11
10+$ 0.9169$ 9.17
30+$ 0.8116$ 24.35
100+$ 0.6924$ 69.24
500+$ 0.6397$ 319.85
800+$ 0.6165$ 493.20
Standard Packaging800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerANHI
PackagingTO-263
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Output Capacitance(Coss)134pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation126W
Reverse Transfer Capacitance (Crss@Vds)5.28pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.547nF
Gate Charge(Qg)32.23nC@10V
TypeN-Channel

Features

AI Translation
  • Low drain-source on-resistance: RDS(ON) = 0.19Ω (typical)
  • Easy gate switching control
  • Enhancement mode: Vth = 2.8 to 4.2 V

Applications

AI Translation
  • Boost PFC switch, single-ended flyback, or double-transistor forward converter
  • Half-bridge, asymmetrical half-bridge, or series resonant half-bridge topology
  • PC power supplies, adapters, LCD & plasma TVs, LED lighting, server power supplies
  • Telecom power supplies and UPS applications

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
ASB65R120EFDANHITO-263541$ 1.5434