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ST STD5NM60-1
| Manufacturer | |
| MPN | STD5NM60-1 |
| LCSC Part # | C165932 |
| Packaging | TO-251(IPAK) |
| Customer # | |
| Key Attributes | 96W 650V 5A 1Ω@10V 1 N-channel N-Channel TO-251(IPAK) Single FETs, MOSFETs RoHS |
| Datasheet | ST STD5NM60-1 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 96W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 5A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 96W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 5A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
AI Translation
- 100% avalanche tested
- HIgh dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.4037 | $ 1.40 |
| 10+ | $ 1.2283 | $ 12.28 |
| 30+ | $ 1.1308 | $ 33.92 |
| 100+ | $ 0.9602 | $ 96.02 |
| 500+ | $ 0.9115 | $ 455.75 |
| 1,000+ | $ 0.8887 | $ 888.70 |
Standard Packaging75/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 96W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 5A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 96W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 5A | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
AI Translation
- 100% avalanche tested
- HIgh dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications
AI Translation
- Switching applications
C165932 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| 7NM70G-TMN2-T | UTC | Similar | TO-251N | 1 | $ 0.4798 | ||
| YFW8N65AMJ | YFW | Similar | TO-251S | 30 | $ 0.3126 | ||
| SVF7N65CMJ | Hangzhou Silan Microelectronics | Similar | TO-251-3 | 1,295 | $ 0.3835 | ||
| CMU7N65A | Cmos | Similar | TO-251 | 60 | $0.2697 $0.2838 | ||
| ITU07N65R | CRMICRO | Similar | TO-251 | 1 | $ 0.3802 |