DIODES DMS3016SSSA-13
| Manufacturer | |
| MPN | DMS3016SSSA-13 |
| LCSC Part # | C155258 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 1.54W 30V 9.8A 13mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs |
| Datasheet | DIODES DMS3016SSSA-13 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOIC-8 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.849nF | |
| Pd - Power Dissipation | 1.54W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.8A | |
| Reverse Transfer Capacitance (Crss) | 123pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOIC-8 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.849nF | |
| Pd - Power Dissipation | 1.54W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.8A | |
| Reverse Transfer Capacitance (Crss) | 123pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky diode on a single die
- Low RDS(ON) — minimizes conduction losses
- Ultra-low VSD — enhanced performance to reduce body diode conduction losses
- Low Qrr — integrated Schottky diode's low Qrr reduces body diode switching losses
- Low gate charge (Qg/Qgs) ratio — reduces risk of shoot-through or cross-conduction current at high frequencies
- Strong avalanche ruggedness — rated for IAR and EAR
- Lead-free, RoHS compliant
- "Green" device
- Compliant with AEC-Q101 high-reliability standard
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOIC-8 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.849nF | |
| Pd - Power Dissipation | 1.54W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.8A | |
| Reverse Transfer Capacitance (Crss) | 123pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOIC-8 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.849nF | |
| Pd - Power Dissipation | 1.54W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.8A | |
| Reverse Transfer Capacitance (Crss) | 123pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky diode on a single die
- Low RDS(ON) — minimizes conduction losses
- Ultra-low VSD — enhanced performance to reduce body diode conduction losses
- Low Qrr — integrated Schottky diode's low Qrr reduces body diode switching losses
- Low gate charge (Qg/Qgs) ratio — reduces risk of shoot-through or cross-conduction current at high frequencies
- Strong avalanche ruggedness — rated for IAR and EAR
- Lead-free, RoHS compliant
- "Green" device
- Compliant with AEC-Q101 high-reliability standard
C155258 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



