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DIODES DMS3016SSSA-13

Manufacturer
MPN
DMS3016SSSA-13
LCSC Part #
C155258
Packaging
SOIC-8
Customer #
Key Attributes
1.54W 30V 9.8A 13mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs
DatasheetDIODES DMS3016SSSA-13
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingSOIC-8
Output Capacitance(Coss)158pF
Ciss-Input Capacitance1.849nF
Pd - Power Dissipation1.54W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)9.8A
Reverse Transfer Capacitance (Crss)123pF
RDS(on)13mΩ@10V
Number1 N-channel
Gate Charge(Qg)43nC@10V
Vgs±12V
Gate Threshold Voltage (Vgs(th))2.3V
TypeN-Channel

Features

AI Translation
  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky diode on a single die
  • Low RDS(ON) — minimizes conduction losses
  • Ultra-low VSD — enhanced performance to reduce body diode conduction losses
  • Low Qrr — integrated Schottky diode's low Qrr reduces body diode switching losses
  • Low gate charge (Qg/Qgs) ratio — reduces risk of shoot-through or cross-conduction current at high frequencies
  • Strong avalanche ruggedness — rated for IAR and EAR
  • Lead-free, RoHS compliant
  • "Green" device
  • Compliant with AEC-Q101 high-reliability standard