ISSI IS62WV51216EBLL-45TLI

The ISSI IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV51216EALL and IS62WV51216EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin TSOP (TYPE l).

• High-speed access time: 45ns, 55ns
• CMOS low power operation - 36 mW (typical) operating
• TTL compatible interface levels
• Single power supply – 1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)
• Data control for upper and lower bytes
• Automotive temperature (- 40℃ to +125℃)