Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi FDMS86380-F085
| Hersteller | |
| Herst.-Teilenr. | FDMS86380-F085 |
| LCSC-Nr. | C891102 |
| Verp. | Power-56-8 |
| Kundennummer | |
| Hauptmerkm. | 80V 50A 75W 11.3mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs |
| Datenblatt | onsemi FDMS86380-F085 |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-56-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 11.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.44nF | |
| Gate Charge(Qg) | 20nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-56-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 11.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.44nF | |
| Gate Charge(Qg) | 20nC@10V |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET is manufactured using an advanced PowerTrench® process with integrated shield gate technology. The process is optimized for on-resistance while maintaining superior switching performance.
Merkmale
KI-Übersetzung
- Typical R<sub>DS(on)</sub> = 11.3 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A
- Typical Q<sub>g(tot)</sub> = 20 nC at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A
- Single-pulse avalanche rated
- RoHS compliant
- AEC Q101 qualified
Anwendungen
KI-Übersetzung
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Electronic steering systems
- Integrated starter-generator
- Distributed power architecture and voltage regulation modules
- 12V system main switch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.1422 | $ 1.14 |
| 200+ | $ 0.443 | $ 88.60 |
| 500+ | $ 0.4276 | $ 213.80 |
| 1,000+ | $ 0.4199 | $ 419.90 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-56-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 11.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.44nF | |
| Gate Charge(Qg) | 20nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power-56-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 11.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.44nF | |
| Gate Charge(Qg) | 20nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET is manufactured using an advanced PowerTrench® process with integrated shield gate technology. The process is optimized for on-resistance while maintaining superior switching performance.
Merkmale
KI-Übersetzung
- Typical R<sub>DS(on)</sub> = 11.3 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A
- Typical Q<sub>g(tot)</sub> = 20 nC at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A
- Single-pulse avalanche rated
- RoHS compliant
- AEC Q101 qualified
Anwendungen
KI-Übersetzung
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Electronic steering systems
- Integrated starter-generator
- Distributed power architecture and voltage regulation modules
- 12V system main switch
C891102 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SP80N09GHNK | Siliup | PDFN5X6-8L | 3,430 | $ 0.2282 | ||
| FDWS86380-F085 | onsemi | Power-56 | 7 | $ 2.3054 | ||
| LWT1H13AD5 | Lewa Micro | PDFN-8L(5x6) | 4,975 | $ 0.4502 | ||
| XRS50N10LF | XNRUSEMI | PDFN-8L(5x6) | 4,385 | $0.1969 $0.2072 | ||
| PJMG10H60NDN | PJSEMI | PDFN-8L(5x6) | 35 | $ 0.4313 | ||
| DON50N10-TL | DOINGTER | DFN5x6-8 | 20 | $ 0.1909 | ||
| XRS60N10F | XNRUSEMI | PDFN-8L(5x6) | 2,775 | $0.2261 $0.2379 | ||
| NTMFS015N10MCLT1G | onsemi | SO-8FL | 0 | $ 1.0554 | ||
| FDMS86101-VB | VBsemi Elec | DFN5x6-8 | 0 | $ 1.948 | ||
| NCEP090N85GU | NCE | DFN-8L(5x6) | 0 | $ 0.5402 |