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EDA 모델EasyEDA
onsemi FDMA410NZ
| 제조업체 | |
| 제조사 품번 | FDMA410NZ |
| LCSC 번호 | C890898 |
| 포장 | VDFN-6(2x2) |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 20V 9.5A VDFN-6(2x2) |
| 데이터시트 | onsemi FDMA410NZ |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 130pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 130pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.5A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) <~1.5× on special MicroFET leadframe.
주요 특징
AI 번역
- Max rDS(on)=23 mΩ at VGS=4.5 V, ID=9.5 A
- Max rDS(on)=29 mΩ at VGS=2.5 V, ID=8.0 A
- Max rDS(on)=36 mΩ at VGS=1.8 V, lD=4.0 A
- Max rDS(on)=50 mΩ at VGS=1.5 V, ID=2.0 A
- HBM ESD protection level >2.5 kV
- Low Profile - 0.8 mm maximum in the new package MicroFET 2×2 mm
- Free from halogenated compounds and antimony oxides
응용 분야
AI 번역
- Li-lon Battery Pack
- Baseband Switch
- Load Switch
- DC-DC Conversion
재고 있음: 2
2 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 1.2827 | $ 1.28 |
| 10+ | $ 1.054 | $ 10.54 |
| 30+ | $ 0.9276 | $ 27.83 |
| 100+ | $ 0.7849 | $ 78.49 |
| 500+ | $ 0.7216 | $ 360.80 |
| 1,000+ | $ 0.6941 | $ 694.10 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 130pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 130pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 9.5A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Vgs | ±8V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) <~1.5× on special MicroFET leadframe.
주요 특징
AI 번역
- Max rDS(on)=23 mΩ at VGS=4.5 V, ID=9.5 A
- Max rDS(on)=29 mΩ at VGS=2.5 V, ID=8.0 A
- Max rDS(on)=36 mΩ at VGS=1.8 V, lD=4.0 A
- Max rDS(on)=50 mΩ at VGS=1.5 V, ID=2.0 A
- HBM ESD protection level >2.5 kV
- Low Profile - 0.8 mm maximum in the new package MicroFET 2×2 mm
- Free from halogenated compounds and antimony oxides
응용 분야
AI 번역
- Li-lon Battery Pack
- Baseband Switch
- Load Switch
- DC-DC Conversion
C890898 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| YJQ10N02A | YANGJIE | DFN2020-6L | 300 | $ 0.1234 | ||
| WSD2018ADN22 | Winsok Semicon | DFNWB-6-EP(2x2) | 65 | $0.1805 $0.2005 | ||
| WNM3056-6/TR | WILLSEMI | DFN2x2-6L | 1,615 | $ 0.2607 | ||
| SP30N10NQ | Siliup | DFN-6L(2x2) | 1,670 | $0.0466 $0.0665 | ||
| DMTH4008LFDFWQ-13 | DIODES | UDFN2020-6 | 0 | $ 1.4427 | ||
| PJQ2416_R1_00001 | PANJIT | DFN2020B-6 | 0 | $ 0.1188 | ||
| NCE3013J | NCE | DFN-6L(2x2) | 0 | $ 0.2069 | ||
| VBQG7313 | VBsemi Elec | DFN-6(2x2) | 0 | $ 1.6068 | ||
| PMPB20EN-VB | VBsemi Elec | DFN-6(2x2) | 0 | $1.4339 $1.5093 | ||
| PMPB23XNEAX-VB | VBsemi Elec | DFN-6(2x2) | 0 | $1.4299 $1.5051 |