- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
HUASHUO HSU3031
| Produttore | HUASHUOAsian Brands |
| Cod. Prod. | HSU3031 |
| Cod. LCSC | C701014 |
| Imballo | TO-252-2 |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 30V 70A TO-252-2 |
| Scheda Tecnica | HUASHUO HSU3031 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 8 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.45nF | |
| Gate Charge(Qg) | 60nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.45nF | |
| Gate Charge(Qg) | 60nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HSU3031 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU3031 complies with RoHS and green product requirements, is 100% guaranteed with avalanche energy capability (EAS), and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- 100% guaranteed avalanche energy (EAS)
- Green/RoHS-compliant devices available
- Excellent dV/dt immunity
- Advanced high cell density trench technology
Disponibile: 2,450
2,450 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.2873 | $ 1.44 |
| 50+ | $ 0.2256 | $ 11.28 |
| 150+ | $ 0.1991 | $ 29.87 |
| 500+ | $ 0.1662 | $ 83.10 |
| 2,500+ | $ 0.1515 | $ 378.75 |
| 5,000+ | $ 0.1427 | $ 713.50 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.45nF | |
| Gate Charge(Qg) | 60nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | TO-252-2 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.45nF | |
| Gate Charge(Qg) | 60nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HSU3031 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU3031 complies with RoHS and green product requirements, is 100% guaranteed with avalanche energy capability (EAS), and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- 100% guaranteed avalanche energy (EAS)
- Green/RoHS-compliant devices available
- Excellent dV/dt immunity
- Advanced high cell density trench technology
C701014 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HSU6119 | HUASHUO | TO-252 | 680 | $ 1.0948 | ||
| HSU4119 | HUASHUO | TO-252 | 455 | $ 0.6775 | ||
| HSU100P03 | HUASHUO | TO-252-2 | 2,356 | $ 0.5016 | ||
| HSU100P04 | HUASHUO | TO-252-2 | 2,165 | $ 0.9283 | ||
| HSU70P06 | HUASHUO | TO-252-2 | 32 | $ 1.2264 | ||
| HSU3119 | HUASHUO | TO-252-2L | 1,760 | $ 0.597 | ||
| HSU8119 | HUASHUO | TO-252-2L | 4,172 | $ 0.9898 | ||
| HSU4117 | HUASHUO | TO-252 | 475 | $ 0.2929 |