MICROCHIP 1N6941UTK3AS/TR

This Schottky diode is designed for applications requiring high power density and excellent thermal dissipation performance (typically 0.25 ~ 0.35°C/W). The 1N6940UTK3AS through 1N6942UTK3AS devices feature anode-to-tab polarity (standard), with cathode-to-tab versions also available as 1N6940UTK3CS through 1N6942UTK3CS. The device is also available in a tabless version. Upscreening services for high-reliability applications are additionally offered. Microsemi provides a wide range of other products to meet voltage regulation application needs at both higher and lower power levels.

• JEDEC registered 1N6940 - 1N6942 series part numbers.
• Oxide passivated junction construction.
• Guard ring protected for enhanced reverse energy capability.
• Epitaxial construction for minimum forward voltage drop.
• Hermetic, low-profile ceramic SMT power package.
• JAN, JANTX, and JANTXV certifications available per MIL-PRF-19500/726 (refer to part numbering convention for all available options).
• RoHS compliant versions available (commercial grade only).

• Low package inductance.
• Ultra-low thermal resistance.
• Leadless versions available for special requirements, such as 1N6940UTK3, 1N6941UTK3, and 1N6942UTK3.
• Rugged ceramic and metal construction, wire-bond free.
• High surge capability with double-sided heat dissipation.