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EDA-ModelleEasyEDA
Infineon IPP052N06L3 G
| Hersteller | |
| Herst.-Teilenr. | IPP052N06L3 G |
| LCSC-Nr. | C537136 |
| Verp. | TO-220-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 80A TO-220-3 |
| Datenblatt | Infineon IPP052N06L3 G |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-3 | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 115W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.4nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-3 | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 115W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.4nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High-frequency switching and synchronous rectification
- Technology optimized for DC/DC converters
- Excellent gate charge × RDS(on) figure of merit
- N-channel, logic level
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
Vorrätig: 475
475 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.2973 | $ 1.30 |
| 10+ | $ 1.1959 | $ 11.96 |
| 50+ | $ 1.1332 | $ 56.66 |
| 100+ | $ 1.0672 | $ 106.72 |
| 500+ | $ 1.0382 | $ 519.10 |
| 1,000+ | $ 1.0253 | $ 1025.30 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-3 | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 115W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.4nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-3 | |
| Output Capacitance(Coss) | 1.1nF | |
| Pd - Power Dissipation | 115W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.4nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High-frequency switching and synchronous rectification
- Technology optimized for DC/DC converters
- Excellent gate charge × RDS(on) figure of merit
- N-channel, logic level
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
C537136 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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