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Modelli EDAEasyEDA
Infineon IPD220N06L3 G
| Produttore | |
| Cod. Prod. | IPD220N06L3 G |
| Cod. LCSC | C536741 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | Power-Transistor |
| Scheda Tecnica | Infineon IPD220N06L3 G |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 270pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 17.8mΩ@10V;27.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 270pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 17.8mΩ@10V;27.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Caratteristiche
Traduzione AI
- High-frequency switching and synchronous rectification
- Technology optimized for DC/DC converters
- Excellent gate charge × RDS(on) product (figure of merit FOM)
- N-channel, logic level
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
Disponibile: 34
34 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.5523 | $ 0.55 |
| 10+ | $ 0.4327 | $ 4.33 |
| 30+ | $ 0.3803 | $ 11.41 |
| 100+ | $ 0.3163 | $ 31.63 |
| 500+ | $ 0.2885 | $ 144.25 |
| 1,000+ | $ 0.2705 | $ 270.50 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 270pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 17.8mΩ@10V;27.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 270pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 17.8mΩ@10V;27.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 7nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- High-frequency switching and synchronous rectification
- Technology optimized for DC/DC converters
- Excellent gate charge × RDS(on) product (figure of merit FOM)
- N-channel, logic level
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
C536741 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| 40N10 | HANGYU MICROELECTRONICS | TO-252 | 2,505 | $ 0.0952 | ||
| AGM628D | AGMSEMI | TO-252 | 2,370 | $ 0.1256 | ||
| SP010N15GTH | Siliup | TO-252 | 660 | $ 0.2847 | ||
| HSU0066 | HUASHUO | TO-252 | 183 | $ 0.4753 | ||
| SP010N13GTH | Siliup | TO-252 | 2,320 | $ 0.2442 | ||
| 35N06 | UMW | TO-252 | 2,610 | $ 0.1312 | ||
| MDD30N06D | MDD(Microdiode Semiconductor) | TO-252 | 840 | $0.1007 $0.1071 | ||
| AGM609D | AGMSEMI | TO-252 | 180 | $ 0.2034 | ||
| IPD30N06S4L-23 | Infineon | TO-252-3 | 0 | $ 0.5294 | ||
| PJD45N06A-AU_L2_000A1 | PANJIT | TO-252 | 0 | $ 1.0778 |