Infineon IFF600B12ME4_B11

Hersteller	Infineon
Herst.-Teilenr.	IFF600B12ME4_B11
LCSC-Nr.	C535985
Verp.	-
Kundennummer
Hauptmerkm.	600A 1.2kV FS (Field Stop) IGBT Modules RoHS
Datenblatt	Infineon IFF600B12ME4_B11
RoHS-Konformität	1 Dokumente verfügbar

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	-
Td(off)	510ns;520ns;550ns
Td(on)	160ns;170ns
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	2.05nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Gate Charge(Qg)	4.4uC
Vce Saturation(VCE(sat))	1.75V;2V;2.05V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	50.5mJ;74mJ;83.5mJ
Turn-On Energy (Eon)	35.5mJ;55.5mJ;63mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	37nF
Output Capacitance(Coes)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	-
Td(off)	510ns;520ns;550ns
Td(on)	160ns;170ns
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	2.05nF
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Gate Charge(Qg)	4.4uC
Vce Saturation(VCE(sat))	1.75V;2V;2.05V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	50.5mJ;74mJ;83.5mJ
Turn-On Energy (Eon)	35.5mJ;55.5mJ;63mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	37nF
Output Capacitance(Coes)	-

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Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	-
Td(off)	510ns;520ns;550ns
Td(on)	160ns;170ns
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	2.05nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Gate Charge(Qg)	4.4uC
Vce Saturation(VCE(sat))	1.75V;2V;2.05V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	50.5mJ;74mJ;83.5mJ
Turn-On Energy (Eon)	35.5mJ;55.5mJ;63mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	37nF
Output Capacitance(Coes)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	-
Td(off)	510ns;520ns;550ns
Td(on)	160ns;170ns
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	2.05nF
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Gate Charge(Qg)	4.4uC
Vce Saturation(VCE(sat))	1.75V;2V;2.05V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	50.5mJ;74mJ;83.5mJ
Turn-On Energy (Eon)	35.5mJ;55.5mJ;63mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	37nF
Output Capacitance(Coes)	-