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EDA-ModelleEasyEDA
SINO-IC SE2102E
| Hersteller | SINO-ICAsian Brands |
| Herst.-Teilenr. | SE2102E |
| LCSC-Nr. | C5116037 |
| Verp. | SOT-523 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 20V 0.6A SOT-523 |
| Datenblatt | SINO-IC SE2102E |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | SINO-IC | |
| Verp. | SOT-523 | |
| Output Capacitance(Coss) | 21pF | |
| Pd - Power Dissipation | 170mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| RDS(on) | 470mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Vgs | ±6V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | SINO-IC | |
| Verp. | SOT-523 | |
| Output Capacitance(Coss) | 21pF | |
| Pd - Power Dissipation | 170mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 600mA |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| RDS(on) | 470mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Vgs | ±6V | |
| Type | N-Channel |
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Vorrätig: 3,380
3,380 Ab Lager, sofort versandfertig
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0367 | $ 0.73 |
| 200+ | $ 0.0288 | $ 5.76 |
| 600+ | $ 0.0244 | $ 14.64 |
| 3,000+ | $ 0.0218 | $ 65.40 |
| 9,000+ | $ 0.0195 | $ 175.50 |
| 21,000+ | $ 0.0183 | $ 384.30 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | SINO-IC | |
| Verp. | SOT-523 | |
| Output Capacitance(Coss) | 21pF | |
| Pd - Power Dissipation | 170mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| RDS(on) | 470mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Vgs | ±6V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | SINO-IC | |
| Verp. | SOT-523 | |
| Output Capacitance(Coss) | 21pF | |
| Pd - Power Dissipation | 170mW | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 600mA |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| RDS(on) | 470mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | 1.4nC@4.5V | |
| Vgs | ±6V | |
| Type | N-Channel |
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C5116037 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |