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Modelli EDAEasyEDA
onsemi FDS8842NZ
| Produttore | |
| Cod. Prod. | FDS8842NZ |
| Cod. LCSC | C467455 |
| Imballo | SO-8 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 40V 14.9A SO-8 |
| Scheda Tecnica | onsemi FDS8842NZ |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14.9A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.845nF | |
| Gate Charge(Qg) | 73nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14.9A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.845nF | |
| Gate Charge(Qg) | 73nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
FDS8842NZ is designed to minimize losses in power conversion applications. Combining advances in silicon technology and packaging, it achieves the lowest RDS(ON) while maintaining excellent switching performance.
Caratteristiche
Traduzione AI
- Maximum rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
- Maximum rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
- Typical HBM ESD protection rating of 4.4 kV
- High-performance trench technology for ultra-low RDS(ON) and fast switching
- High power and high current handling capability
- Lead-free pins, RoHS compliant
Applicazioni
Traduzione AI
- Synchronous buck converters for notebook Vcore and server applications
- Notebook battery
- Load switch
Disponibile: 29
29 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 3.1876 | $ 3.19 |
| 10+ | $ 2.8285 | $ 28.29 |
| 30+ | $ 2.6043 | $ 78.13 |
| 100+ | $ 2.3753 | $ 237.53 |
| 500+ | $ 2.2713 | $ 1135.65 |
| 1,000+ | $ 2.2258 | $ 2225.80 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14.9A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.845nF | |
| Gate Charge(Qg) | 73nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14.9A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.845nF | |
| Gate Charge(Qg) | 73nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
FDS8842NZ is designed to minimize losses in power conversion applications. Combining advances in silicon technology and packaging, it achieves the lowest RDS(ON) while maintaining excellent switching performance.
Caratteristiche
Traduzione AI
- Maximum rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
- Maximum rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
- Typical HBM ESD protection rating of 4.4 kV
- High-performance trench technology for ultra-low RDS(ON) and fast switching
- High power and high current handling capability
- Lead-free pins, RoHS compliant
Applicazioni
Traduzione AI
- Synchronous buck converters for notebook Vcore and server applications
- Notebook battery
- Load switch
C467455 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HSM4094 | HUASHUO | SOP-8 | 877 | $ 0.4439 | ||
| ASDM65N18S/SOP8 | ASDsemi | SOP-8 | 100 | $ 0.2111 | ||
| IRF7842TRPBF | Infineon | SO-8 | 9,499 | $ 0.8377 | ||
| SI4124DY-T1-GE3 | VISHAY | SO-8 | 2,170 | $ 1.1465 | ||
| SP40N03P8 | Siliup | SOP-8L | 1,825 | $ 0.1417 | ||
| AGM1810S | AGMSEMI | SOP-8 | 170 | $0.3507 $0.3812 | ||
| IRF7842PBF | Infineon | SO-8 | 0 | $ 0.5565 | ||
| SI4124DY-T1-E3 | VISHAY | SOIC-8 | 0 | $ 2.2929 | ||
| FDS8638 | onsemi | SOIC-8 | 0 | $ 1.1083 | ||
| FDS86540 | onsemi | SO-8 | 0 | $ 1.8287 |