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Infineon IRFU5410PBF
| 제조업체 | |
| 제조사 품번 | IRFU5410PBF |
| LCSC 번호 | C3032 |
| 포장 | TO-251(IPAK) |
| 고객 번호 | |
| 주요 제원 | MOSFET P-CH 100V 13A TO-251(IPAK) |
| 데이터시트 | Infineon IRFU5410PBF |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
개요
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
주요 특징
- Ultra Low On-Resistance
- P-Channel
- Surface Mount (IRFR5410)
- Straight Lead (IRFU5410)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 0.5901 | $ 0.59 |
| 10+ | $ 0.4754 | $ 4.75 |
| 30+ | $ 0.4164 | $ 12.49 |
| 75+ | $ 0.359 | $ 26.93 |
| 525+ | $ 0.3262 | $ 171.26 |
| 975+ | $ 0.3082 | $ 300.50 |
표준 패키지75/Full Tube | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
개요
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
주요 특징
- Ultra Low On-Resistance
- P-Channel
- Surface Mount (IRFR5410)
- Straight Lead (IRFU5410)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
C3032 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| CMU5950A | Cmos | TO-251 | 4 | $0.3881 $0.4085 | ||
| CMU5941 | Cmos | TO-251 | 5 | $0.2617 $0.2754 | ||
| 18P10AGJ-HF-VB | VBsemi Elec | TO-251 | 100 | $ 0.7258 | ||
| IRFU5410PBF-VB | VBsemi Elec | TO-251 | 25 | $0.6524 $0.6867 | ||
| VBF2152M | VBsemi Elec | TO-251 | 10 | $1.2916 $1.5195 | ||
| FQU8P10-VB | VBsemi Elec | TO-251 | 10 | $0.3963 $0.4662 | ||
| IRFU9120NPBF-VB | VBsemi Elec | TO-251 | 16 | $0.5242 $0.5517 | ||
| VBFB2104N | VBsemi Elec | TO-251 | 0 | $ 1.7384 | ||
| H7P1002DL-VB | VBsemi Elec | TO-251 | 0 | $ 0.7153 | ||
| VBFB2101M | VBsemi Elec | TO-251 | 0 | $ 0.6942 |