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EDA-ModelleEasyEDA
VISHAY IRFRC20TRLPBF
| Hersteller | |
| Herst.-Teilenr. | IRFRC20TRLPBF |
| LCSC-Nr. | C3022 |
| Verp. | DPAK(TO-252) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 600V 2A DPAK(TO-252) |
| Datenblatt | VISHAY IRFRC20TRLPBF |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| RDS(on) | 4.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| RDS(on) | 4.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC, SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Merkmale
KI-Übersetzung
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- RoHS COMPLIANT
- Surface Mount (IRFRC20, SiHFRC20)
- Straight Lead (IRFUC20, SiHFUC20)
- HALOGEN FREE
- Available in Tape and Reel Available
- Fast Switching
- Ease of Paralleling
Vorrätig: 28
28 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.3014 | $ 1.30 |
| 10+ | $ 1.1243 | $ 11.24 |
| 30+ | $ 1.0366 | $ 31.10 |
| 100+ | $ 0.879 | $ 87.90 |
| 500+ | $ 0.827 | $ 413.50 |
| 1,000+ | $ 0.7994 | $ 799.40 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| RDS(on) | 4.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.6pF | |
| RDS(on) | 4.4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC, SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Merkmale
KI-Übersetzung
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- RoHS COMPLIANT
- Surface Mount (IRFRC20, SiHFRC20)
- Straight Lead (IRFUC20, SiHFUC20)
- HALOGEN FREE
- Available in Tape and Reel Available
- Fast Switching
- Ease of Paralleling
C3022 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FQD2N65SE | KTP | TO-252 | 2,170 | $0.1035 $0.1089 | ||
| FQD2N60SE | KTP | TO-252 | 2,075 | $0.1128 $0.1187 | ||
| 2N60G-TN3-R | UTC | TO-252 | 20 | $ 0.1378 | ||
| 2N60 | HANGYU MICROELECTRONICS | TO-252 | 30 | $ 0.0569 | ||
| SPD02N80C3 | Infineon | TO-252-2(DPAK) | 107 | $ 1.0836 | ||
| MS7N80HGD0 | MASPOWER | TO-252 | 50 | $ 0.5053 | ||
| STD2HNK60Z-VB | VBsemi Elec | TO-252 | 20 | $0.5027 $0.5913 | ||
| JCS2N60RC | Jilin Sino-Microelectronics | DPAK | 5 | $ 0.2146 | ||
| 2N60L | UMW | TO-252 | 1,635 | $ 0.1531 | ||
| IRFRC20TRPBF-BE3 | VISHAY | TO-252AA | 0 | $ 0.6774 |