Shanghai Prisemi Elec PDTC114TM
| Hersteller | Shanghai Prisemi ElecAsian Brands |
| Herst.-Teilenr. | PDTC114TM |
| LCSC-Nr. | C110682 |
| Verp. | SOT-723 |
| Kundennummer | |
| Hauptmerkm. | TRANS PREBIAS 50V SOT-723 |
| Datenblatt | Shanghai Prisemi Elec PDTC114TM |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Shanghai Prisemi Elec | |
| Verp. | SOT-723 | |
| Current - Collector Cutoff | 0.5uA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 600 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Shanghai Prisemi Elec | |
| Verp. | SOT-723 | |
| Current - Collector Cutoff | 0.5uA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 600 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
- They also have the advantage of almost completely eliminating parasitic effects.
- Only the on/off conditions need to be set for operation, making the device design easy.
Anwendungen
KI-Übersetzung
- Inverter
- Interface
- Driver
Vorrätig: 400
400 Ab Lager, sofort versandfertig
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0333 | $ 0.67 |
| 200+ | $ 0.0261 | $ 5.22 |
| 600+ | $ 0.0221 | $ 13.26 |
| 2,000+ | $ 0.0198 | $ 39.60 |
| 8,000+ | $ 0.0177 | $ 141.60 |
| 16,000+ | $ 0.0166 | $ 265.60 |
Standardgehäuse8000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Shanghai Prisemi Elec | |
| Verp. | SOT-723 | |
| Current - Collector Cutoff | 0.5uA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 600 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Shanghai Prisemi Elec | |
| Verp. | SOT-723 | |
| Current - Collector Cutoff | 0.5uA | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 600 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
- They also have the advantage of almost completely eliminating parasitic effects.
- Only the on/off conditions need to be set for operation, making the device design easy.
Anwendungen
KI-Übersetzung
- Inverter
- Interface
- Driver
C110682 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



