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UMW IRLR9343TR(UMW)
| Hersteller | UMWAsian Brands |
| Herst.-Teilenr. | IRLR9343TR(UMW) |
| LCSC-Nr. | C7472426 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET 55V 20A TO-252 |
| Datenblatt | UMW IRLR9343TR(UMW) |
| Alternativteile | 7 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UMW | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 55V | |
| Operating Temperature | -40℃~+175℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V;150mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UMW | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 55V | |
| Operating Temperature | -40℃~+175℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V;150mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V |
Beschreibung
Utilizing advanced process technology with key parameters optimized for Class-D audio amplifier applications. Features low gate charge and switching charge for improved THD and higher efficiency. Low reverse recovery charge helps enhance THD and reduce EMI. Operating junction temperature up to 175°C ensures robust durability. Low on-resistance contributes to improved efficiency. Available in multiple package options. Repetitive avalanche capability enhances robustness, with a variety of package options available.
Merkmale
- Drain-source breakdown voltage V_DS = -55V
- Drain current I_D = -20A
- On-resistance R_DS(ON) < 97mΩ at gate-source voltage V_GS = -10V
- On-resistance R_DS(ON) < 130mΩ at gate-source voltage V_GS = -4.5V
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2705 | $ 1.35 |
| 50+ | $ 0.2112 | $ 10.56 |
| 150+ | $ 0.1858 | $ 27.87 |
| 500+ | $ 0.1541 | $ 77.05 |
| 2,500+ | $ 0.1399 | $ 349.75 |
| 5,000+ | $ 0.1315 | $ 657.50 |
Standardgehäuse2500/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UMW | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 55V | |
| Operating Temperature | -40℃~+175℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V;150mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | UMW | |
| Verp. | TO-252 | |
| Drain to Source Voltage | 55V | |
| Operating Temperature | -40℃~+175℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 93mΩ@10V;150mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 31nC@10V |
Beschreibung
Utilizing advanced process technology with key parameters optimized for Class-D audio amplifier applications. Features low gate charge and switching charge for improved THD and higher efficiency. Low reverse recovery charge helps enhance THD and reduce EMI. Operating junction temperature up to 175°C ensures robust durability. Low on-resistance contributes to improved efficiency. Available in multiple package options. Repetitive avalanche capability enhances robustness, with a variety of package options available.
Merkmale
- Drain-source breakdown voltage V_DS = -55V
- Drain current I_D = -20A
- On-resistance R_DS(ON) < 97mΩ at gate-source voltage V_GS = -10V
- On-resistance R_DS(ON) < 130mΩ at gate-source voltage V_GS = -4.5V
C7472426 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STD35P6LLF6(UMW) | UMW | TO-252 | 611 | $ 0.4237 | ||
| IRFR5305TR(UMW) | UMW | TO-252 | 6,185 | $ 0.2479 | ||
| AOD409(UMW) | UMW | TO-252 | 3,120 | $ 0.3047 | ||
| IRF4905STRL(UMW) | UMW | TO-252 | 21,612 | $ 0.3739 | ||
| SUD50P06-15(UMW) | UMW | TO-252 | 60,760 | $ 0.3628 | ||
| IRFR9024NTR(UMW) | UMW | TO-252 | 1,070 | $ 0.1771 | ||
| SPD30P06PG(UMW) | UMW | TO-252 | 4,200 | $ 0.2687 |